MRF19030LR3 datasheet, PDF - EEWORLD Datasheet

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MRF19030LR3: DescriptionThe RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; CategoryDiscrete semiconductor The transistor; File Size593KB，8 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com; Environmental Compliance

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MRF19030LR3 Overview

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF19030LR3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Motorola ( NXP )
package instruction	NI-400, CASE 465E-04, 2 PIN
Reach Compliance Code	unknow
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	83.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF19030/D

The RF MOSFET Line

RF Power Field Effect Transistors

Designed for class AB PCN and PCS base station applications with

frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and

multicarrier amplifier applications.

•

CDMA Performance @ 1990 MHz, 26 Volts

IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13

885 kHz — - 47 dBc @ 30 kHz BW

1.25 MHz — - 55 dBc @ 12.5 kHz BW

2.25 MHz — - 55 dBc @ 1 MHz BW

Output Power — 4.5 Watts Avg.

Power Gain — 13.5 dB

Efficiency — 17%

•

Internally Matched, Controlled Q, for Ease of Use

•

High Gain, High Efficiency and High Linearity

•

Integrated ESD Protection

•

Designed for Maximum Gain and Insertion Phase Flatness

•

Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW

Output Power

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

N - Channel Enhancement - Mode Lateral MOSFETs

MRF19030LR3

MRF19030LSR3

2.0 GHz, 30 W, 26 V

LATERAL N - CHANNEL

RF POWER MOSFETs

Freescale Semiconductor, Inc...

CASE 465E - 04, STYLE 1

NI - 400

MRF19030LR3

CASE 465F - 04, STYLE 1

NI - 400S

MRF19030LSR3

MAXIMUM RATINGS

Rating

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Symbol

DSS

stg

Value

- 0.5, +15

83.3

0.48

- 65 to +150

200

Unit

Vdc

Watts

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

θJC

Value

2.1

Unit

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Human Body Model

Machine Model

Class

2 (Minimum)

M3 (Minimum)

NOTE -

CAUTION

- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Rev. 10

MOTOROLA RF



Motorola, Inc. 2004

DEVICE DATA

For More Information On This Product,

Go to: www.freescale.com

MRF19030LR3 MRF19030LSR3

MRF19030LR3 Related Products

	MRF19030LR3	MRF19030LSR3
Description	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Is it Rohs certified?	conform to	conform to
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	NI-400, CASE 465E-04, 2 PIN	NI-400S, CASE 465F-04, 2 PIN
Reach Compliance Code	unknow	unknow
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND	L BAND
JESD-30 code	R-CDFM-F2	R-CDFP-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLATPACK
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	83.3 W	83.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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