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BAV70QA,147

Description
Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size686KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BAV70QA,147 Overview

Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon

BAV70QA,147 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionDFN1010D-3, 3 PIN
Reach Compliance Codecompliant
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.325 W
GuidelineAEC-Q101; IEC-60134
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1
BAV70QA
4 May 2016
Dual common cathode high-speed switching diode
Product data sheet
1. General description
Dual common cathode high-speed switching diode encapsulated in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and
solderable side pads.
2. Features and benefits
High switching speed: t
rr
≤ 4 ns
Low leakage current: I
R
≤ 0.5 µA
Reverse voltage V
R
≤ 100 V
Low capacitance C
d
≤ 1.5 pF
Ultra small SMD plastic package
Low package height of 0.37 mm
AEC-Q101 qualified
Suitable for Automatic Optical Inspection (AOI) of solder joint
3. Applications
High-speed switching
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Per diode
I
F
V
R
I
R
t
rr
[1]
Parameter
forward current
reverse voltage
reverse current
reverse recovery time
Conditions
T
amb
= 25 °C; single diode loaded
T
j
= 25 °C
V
R
= 80 V; T
j
= 25 °C
I
F
= 10 mA; I
R
= 10 mA; I
R(meas)
= 1 mA;
R
L
= 100 Ω; T
amb
= 25 °C
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
300
100
0.5
4
Unit
mA
V
µA
ns
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

BAV70QA,147 Related Products

BAV70QA,147 BAV70QAZ 934069813147
Description Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon DIODE HS SW 100V 175MA SOT1215 DIODE HS SW 100V 175MA SOT1215
Diode type RECTIFIER DIODE standard RECTIFIER DIODE
Is it Rohs certified? conform to - conform to
Maker Nexperia - Nexperia
package instruction DFN1010D-3, 3 PIN - R-PDSO-N3
Reach Compliance Code compliant - compliant
Shell connection CATHODE - CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON - SILICON
JESD-30 code R-PDSO-N3 - R-PDSO-N3
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 2 - 2
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Minimum operating temperature -55 °C - -55 °C
Maximum output current 0.3 A - 0.3 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Maximum power dissipation 0.325 W - 0.325 W
Guideline AEC-Q101; IEC-60134 - AEC-Q101; IEC-60134
Maximum repetitive peak reverse voltage 100 V - 100 V
Maximum reverse recovery time 0.004 µs - 0.004 µs
surface mount YES - YES
Terminal surface Tin (Sn) - Tin (Sn)
Terminal form NO LEAD - NO LEAD
Terminal location DUAL - DUAL

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