PWR82325-100 datasheet, PDF - EEWORLD Datasheet

PWR82325-100: DescriptionPower Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size217KB，3 Pages; ManufacturerData Device Corporation

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PWR82325-100 Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	Data Device Corporation
Reach Compliance Code	compliant
Maximum drain current (Abs) (ID)	7 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Number of components	1
Maximum operating temperature	125 °C
Base Number Matches	1

	PWR82325-100	PWR82324-100	PWR82324-110	PWR82324-120	PWR82325-120
Description	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Maximum drain current (Abs) (ID)	7 A	12 A	12 A	12 A	7 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Number of components	1	1	1	1	1
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Base Number Matches	1	1	1	1	1
Is Samacsys	-	N	N	N	N

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