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IS49RL36160-125FBLI

Description
DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168
Categorystorage    storage   
File Size3MB,115 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance
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IS49RL36160-125FBLI Overview

DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168

IS49RL36160-125FBLI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
package instructionLBGA,
Reach Compliance Codecompliant
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeS-PBGA-B168
length13.5 mm
memory density603979776 bit
Memory IC TypeDDR DRAM
memory width36
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
organize16MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Maximum seat height1.25 mm
self refreshYES
Maximum supply voltage (Vsup)1.42 V
Minimum supply voltage (Vsup)1.28 V
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13.5 mm
Base Number Matches1
576Mb: x18, x36 RLDRAM 3
Features
RLDRAM 3
IS49RL18320– 2 Meg x 18 x 16 Banks
IS49RL36160– 1 Meg x 36 x 16 Banks
Features
1066 MHz DDR operation (2133 Mb/s/ball data
rate)
76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock
frequency)
Organization
– 32 Meg x 18, and 16 Meg x 36 common I/O (CIO)
– 16 banks
1.2V center-terminated push/pull I/O
2.5V V
EXT
, 1.35V V
DD
, 1.2V V
DDQ
I/O
Reduced cycle time (
t
RC (MIN) = 8 - 12ns)
SDR addressing
Programmable READ/WRITE latency (RL/WL) and
burst length
Data mask for WRITE commands
Fr
x,
DK
x#)
and output data clocks (QK
x,
QK
x#)
On-die DLL generates CK edge-aligned data and
64ms refresh (128K refresh per 64ms)
168-ball FBGA package
Ω
or 60
Ω
matched impedance outputs
Integrated on-die termination (ODT)
Single or multibank writes
Extended operating range (200–1066 MHz)
READ training register
Multiplexed and non-multiplexed addressing capa-
bilities
Mirror function
Output driver and ODT calibration
JTAG interface (IEEE 1149.1-2001)
Clock cycle and
t
RC timing
– 0.93ns and
t
RC (MIN) = 8ns
(RL3-2133)
– 0.93ns and
t
RC (MIN) = 10ns
(RL3-2133)
– 1.07ns and
t
RC (MIN) = 8ns
(RL3-1866)
– 1.07ns and
t
RC (MIN) = 10ns
(RL3-1866)
– 1.25ns and
t
RC (MIN) = 8ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 10ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 12ns
(RL3-1600)
Con guration
-32 Meg x 18
- 16 Meg x 36
Operating Temperature
– Commercial (T
C
= 0° to +95°C)
– Industrial (T
C
= –40°C to +95°C)
Package
– 168-ball FBGA
– 168-ball FBGA (Pb-free)
Revision
Options
Copyright © 2013 Integrated Silicon Solu on, Inc. All rights reserved. ISSI reserves the right to make changes to this specifica on and its products at any me without
no ce. ISSI assumes no liability arising out of the applica on or use of any informa on, products or services described herein. Customers are advised to obtain the
latest version of this device specifica on before relying on any published informa on and before placing orders for produ.ct
s
Integrated Silicon Solu on, Inc. does not recommend the use of any of its products in life support applica ons where the failure or malfunc on of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effec veness. Products are not authorized for use in such
applica ons unless Integrated Silicon Solu on, Inc. receives wri en assurance to its sa sfac on, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) poten al liability of Integrated Silicon Solu on, Inc is adequately protected under the circumstances
RLDRAM® is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc.
www.issi.com
Rev. 00B,
2/21/2013

IS49RL36160-125FBLI Related Products

IS49RL36160-125FBLI IS49RL18320-125FBL IS49RL18320-125FBLI IS49RL36160-125FBL
Description DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 DDR DRAM, 32MX18, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 DDR DRAM, 32MX18, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168
Is it Rohs certified? conform to conform to conform to conform to
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
package instruction LBGA, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 LBGA,
Reach Compliance Code compliant compli compli compliant
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168
length 13.5 mm 13.5 mm 13.5 mm 13.5 mm
memory density 603979776 bit 603979776 bi 603979776 bi 603979776 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 36 18 18 36
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 168 168 168 168
word count 16777216 words 33554432 words 33554432 words 16777216 words
character code 16000000 32000000 32000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 16MX36 32MX18 32MX18 16MX36
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA LBGA
Package shape SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Maximum seat height 1.25 mm 1.25 mm 1.25 mm 1.25 mm
self refresh YES YES YES YES
Maximum supply voltage (Vsup) 1.42 V 1.42 V 1.42 V 1.42 V
Minimum supply voltage (Vsup) 1.28 V 1.28 V 1.28 V 1.28 V
Nominal supply voltage (Vsup) 1.35 V 1.35 V 1.35 V 1.35 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Terminal form BALL BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
width 13.5 mm 13.5 mm 13.5 mm 13.5 mm
Base Number Matches 1 1 1 1

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