DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3367
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
•
Low on-resistance
R
DS(on)1
= 9.0 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 12.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 18 A)
R
DS(on)3
= 14.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 2800 pF TYP.
•
Built-in gate protection diode
★
ORDERING INFORMATION
PART NUMBER
2SK3367
2SK3367-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note
Total Power Dissipation (T
C
= 25 °C)
Total Power Dissipation (T
A
= 25 °C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty cycle
≤
1%
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
30
±20
±36
±144
40
1.0
150
–55 to + 150
V
V
A
A
W
W
°C
°C
THERMAL RESISTANCE
Channel to case Thermal Resistance
Channel to ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
3.13
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14257EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
★
shows major revised points.
1999
2SK3367
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 36 A, V
GS
= 0 V
I
F
= 36 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
I
D
= 36 A, V
DD
= 24 V, V
GS
= 10 V
I
D
= 18 A, V
GS
= 10 V, V
DD
= 15 V,
R
G
= 10
Ω
TEST CONDITIONS
V
GS
= 10 V, I
D
= 18 A
V
GS
= 4.5 V, I
D
= 18 A
V
GS
= 4.0 V, I
D
= 18 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 18 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
2800
880
400
75
1130
165
210
49
10
14
0.95
45
50
1.5
13
MIN.
TYP.
7.3
9.0
9.7
2.0
26
10
±10
MAX.
9.0
12.0
14.0
2.5
UNIT
mΩ
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
PG.
R
G
V
DD
I
D
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
V
GS
Wave Form
0
10%
90%
V
GS
90%
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
90%
PG.
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D14257EJ3V0DS
2SK3367
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
60
50
40
30
20
10
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature -
˚C
T
C
- Case Temperature -
˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
Pulsed
FORWARD BIAS SAFE OPERATING AREA
1000
d
ite )
Lim10 V
n)
o
=
S(
R
D
V
GS
t
I
= 36 A
(a
D(DC)
I
D(pulse)
= 144 A
1m
s
Po
we
r
Di
10
ms
0m
s
PW
I
D
- Drain Current - A
100
µ
s
I
D
- Drain Current - A
=1
00
160
V
GS
=10 V
4.5 V
10
120
10
ss
ipa
tio
nL
im
ite
d
80
4.0 V
40
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
0
0.5
1
1.5
2
V
DS -
Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
0.01
T
A
= 150˚C
125˚C
75˚C
25˚C
−25˚C
−40˚C
0.001
0.0001
0
V
DS
= 10 V
1
2
3
4
5
6
V
GS
- Gate to Source Voltage - V
Data Sheet D14257EJ3V0DS
3
2SK3367
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
R
th(ch-A)
= 125
˚C/W
100
10
R
th(ch-C)
= 3.13
˚C/W
1
0.1
0.01
0.001
10
µ
T
C
= 25˚C
Single Pulse
100
µ
1m
10m
100m
1
10
100
1000
PW - Pulse Width - s
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
1000
100
10
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01
V
DS
= 10 V
Pulsed
0.1
1
10
100 1000
T
ch
=
−40˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
20
10
I
D
= 18 A
0
5
10
15
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
V
GS(off)
- Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
V
DS
= 10 V
I
D
= 1 mA
Pulsed
V
GS
= 4.0 V
20
4.5 V
3
2
10
10 V
1
0
1
10
100
1000
0
−
50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14257EJ3V0DS
2SK3367
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V
GS
= 10 V
4.5 V
0V
100
16
14
12
10
8
6
4
2
0
−
50
0
50
V
GS
= 4.0 V
4.5 V
10 V
10
1
0.1
0.01
0
Pulsed
1.2 1.4 1.6
I
D
= 10 A
100
150
0.2
0.4
0.6
0.8
1.0
T
ch
- Channel Temperature -
˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
10000
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
V
GS
= 0 V
f = 1 MHz
C
iss
t
r
t
f
t
d(off)
1000
1000
C
oss
C
rss
100
0.1
100
t
d(on)
10
1
10
100
1
0.01
1
0.1
10
I
D
- Drain Current - A
100
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
30
V
DD
= 24 V
15 V
6V
V
GS
10
V
DS
0
20
40
60
12
10
8
6
4
2
80
0
100
20
10
1
0.1
1
10
100
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/µs
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
I
D
= 36 A
14
Data Sheet D14257EJ3V0DS
5
京公网安备 11010802033920号
EEWORLD
