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BUK9880-55115

Description
TRANSISTOR 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size261KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9880-55115 Overview

TRANSISTOR 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK9880-55115 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)30 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

BUK9880-55115 Related Products

BUK9880-55115 BUK9880-55,115
Description TRANSISTOR 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 3.5A, 55V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, ESD PROTECTION LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas) 30 mJ 30 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (ID) 3.5 A 3.5 A
Maximum drain-source on-resistance 0.08 Ω 0.08 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 40 A 40 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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