MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-60SL
TECHNICAL DATA
FEATURES
T
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
T
HIGH POWER
P1dB=48.0dBm at 7.7GHz to 8.5GHz
T
HIGH GAIN
G1dB=6.0dB at 7.7GHz to 8.5GHz
T
BROAD BAND INTERNALLY MATCHED FET
T
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
( Ta= 25
°
C )
UNIT
dBm
dB
A
dB
%
dBc
A
°
C
MIN.
47.0
5.0
-42
TYP. MAX.
48.0
6.0
13.2
35
-45
15.0
±0.8
11.8
100
CHARACTERISTICS
SYMBOL
CONDITIONS
Output Power at 1Db Gain
P
1dB
Compression Point
Power Gain at 1dB Gain
G
1dB
V
DS
= 10V
Compression Point
f = 7.7 to 8.5GHz
I
DS
set=9.5A
Drain Current
I
DS1
Gain Flatness
∆G
η
add
Power Added Efficiency
3rd Order Intermodulation
IM
3
Two-Tone Test
Distortion
Po=36.5dBm
(Single Carrier Level)
Drain Current
I
DS2
Channel Temperature Rise
∆Tch
V
DS
X I
DS
X R
th(c-c)
Recommended Gate Resistance(Rg) : 28
Ω
(Max.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
V
GSoff
I
DSS
V
GSO
R
th(c-c)
( Ta= 25
°
C )
UNIT
S
V
A
V
°
C/W
MIN.
-1.0
-5
TYP.
20
-1.8
38
0.6
MAX.
-3.0
0.8
CONDITIONS
V
DS
= 3V
I
DS
= 12.0A
V
DS
=
3V
I
DS
= 200mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -1.0mA
Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2003
TIM7785-60SL
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
( Ta= 25
°
C )
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
V
V
A
W
°
C
°
C
RATING
15
-5
26
187
175
-65 to +175
PACKAGE OUTLINE (2-16G1B)
0.7
±
0.15
4
–
C1.0
2.5 MIN.
Unit in mm
?
?
Gate
@
Source
A
Drain
@
@
A
20.4
±
0.3
0.1 -
0.05
24.5 MAX.
16.4 MAX.
+0.1
2.5 MIN.
2.6
±
0.3
17.4
±
0.4
8.0
±
0.2
0.2 MAX.
1.4
±
0.3
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
°
2
2.4
±
0.3
5.5 MAX.
TIM7785-60SL
Power Dissipation(PT) vs. Case Temperature(Tc)
200
PT(W)
100
0
0
40
80
120
160
200
Tc(
°
C )
IM3 vs. Power Characteristics
-10
V
DS
=10V
I
DS
set≅9.5A
≅
-20
freq.=8.5GHz
∆f=5MHz
-30
IM3(dBc)
-40
-50
-60
32
34
36
38
40
42
Pout(dBm) @Single carrier level
4
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