IL74
DUAL CHANNEL
ILD74
QUAD CHANNEL
ILQ74
SINGLE CHANNEL
PHOTOTRANSISTOR OPTOCOUPLER
FEATURES
• 7400 Series T2L Compatible
• Transfer Ratio, 35% Typical
• Coupling Capacitance, 0.5 pF
• Single, Dual, & Quad Channel
• Industry Standard DIP Package
• Underwriters Lab File #E52744
V
•
VDE Approvals #0884
(Optional with Option 1, Add -X001 Suffix)
D E
Dimensions in inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The IL74 is an optically coupled pair with a Gal-
lium Arsenide infrared LED and a silicon NPN
phototransistor. Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL74 is especially
designed for driving medium-speed logic, where
it may be used to eliminate troublesome gound
loop and noise problems. Also it can be used to
replace relays and transformers in many digital
interface applications, as well as analog applica-
tions such as CRT modulation.
The ILD74 has two isolated channels in a single
DIP package; the ILQ74 has four isolated chan-
nels per package.
4
3
2
1
Pin One I.D.
Anode
1
2
3
4
8 Emitter
7 Collector
6 Collector
5 Emitter
.268 (6.81)
.255 (6.48)
5
6
7
8
Cathode
Cathode
.390 (9.91)
.379 (9.63)
Anode
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
.305 typ.
(7.75) typ.
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
3°–9°
10°
Typ.
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Anode
1
Cathode
2
Cathode
3
8
.240 (6.10)
.260 (6.60)
9
10
11
12
13
14
15
16
7
6
5
4
3
2
1
pin one
ID.
Anode
4
16
Emitter
15
Collector
14
Collector
13
Emitter
12
Emitter
11
Collector
10
Collector
9
.300 (7.62)
typ.
Anode
5
Cathode
6
Cathode
7
.780 (19.81)
.800 (20.32)
.040 (1.02)
.050 (1.27)
Anode
8
Emitter
.048 (1.22)
.052 (1.32)
.034 (.86)
.130 (3.30)
.150 (3.81)
.280 (7.11)
.330 (8.38)
.014
(.35)
typ.
.033 (.84)
typ.
.016 (.41)
.020 (.51)
.020 (.51)
.030 (.76)
.0255 (.65)
typ.
.100 (2.54) typ.
.130 (3.30)
.150 (3.81)
3° to 9°
.008 (.20)
.012 (.31)
5–1
Maximum Ratings
Emitter
(each channel)
Peak Reverse Voltage .....................................3.0 V
Continuous Forward Current .........................60 mA
Power Dissipationat 25
°
C...........................100 mW
Derate Linearly from 25
°
C....................1.33 mW/
°
C
Detector
(each channel)
Collector-Emitter Breakdown Voltage ..............20 V
Emitter-Base Breakdown Voltage .......................5 V
Collector-Base Breakdown Voltage .................70 V
Power Dissipation at 25
°
C..........................150 mW
Derate Linearly from 25
°
C......................2.0 mW/
°
C
Package
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...............................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C .............................
≥
10
11
Ω
Total Package Dissipation
at 25
°
C Ambient (LED Plus Detector)
IL74.........................................................200 mW
ILD74 ......................................................400 mW
IL74Q ......................................................500 mW
Derate Linearly from 25
°
C
IL74.....................................................2.7 mW/
°
C
ILD74 ................................................5.33 mW/
°
C
ILQ74 ................................................6.67 mW/
°
C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Storage Temperature ...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
Lead Soldering Time at 260
°
C .................... 10 sec.
Electrical Characteristics
(T
A
=25
°
C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown
Voltage,
Collector-Emitter
Leakage Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current Trans-
fer Ratio
Saturation Voltage,
Collector-Emitter
Resistance, Input
to Output
Capacitance, Input
to Output
Switching Times
CTR
DC
V
CEsat
12.5
35
0.3
0.5
V
100
0.5
3.0
G
Ω
pF
µ
s
R
E
=100
Ω
,
V
CE
=10 V,
I
C
=2 mA
%
I
F
=16 mA,
V
CE
=5 V
I
C
=2 mA,
I
F
=16 mA
BV
CEO
20
50
V
I
C
=1 mA
V
F
I
R
C
O
1.3
0.1
25
1.5
100
V
µ
A
pF
I
F
=20 mA
V
R
=3.0 V
V
R
=0
Min.
Typ.
Max.
Unit
Condition
Figure 1. Forward voltage versus forward current
1.4
VF - Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
Ta = -55°C
Ta = 25°C
Ta = 85°C
1
10
IF - Forward Current - mA
100
Figure 2. Normalized non-saturated and saturated
CTR at T
A
=25
°
C versus LED current
1.5
NCTR - Normalized CTR
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25°C
CTRce(sat) Vce = 0.4V
1.0
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
100
Figure 3. Normalized non-saturated and saturated
CTR at T
A
=50
°
C versus LED current
1.5
NCTR - Normalized CTR
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
Ta = 50°C
1.0
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
100
I
CEO
C
CE
5.0
10.0
500
nA
pF
V
CE
=5 V,
I
F
=0
V
CE
=0,
F=1 MHz
Figure 4. Normalized non-saturated and saturated
CTR at T
A
=70
°
C versus LED current
1.5
NCTR - Normalized CTR
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25°C
CTRce(sat) Vce = 0.4V
1.0
0.5
Ta = 70°C
NCTR(SAT)
NCTR
.1
1
10
IF - LED Current - mA
100
R
IO
C
IO
t
ON
,t
OFF
0.0
IL/ILD/ILQ74
5–2
Figure 5. Normalized non-saturated and saturated CTR
at T
A
=85
°
C versus LED current
1.5
NCTR - Normalized CTR
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
Figure 9. Collector base photocurrent versus LED
current
1000
Ta = 25°C
100
10
1
.1
.01
Icb = 1.0357 *IF ^1.3631
1.0
0.5
Ta = 85°C
NCTR(SAT)
NCTR
1
10
IF - LED Current - mA
100
0.0
.1
Icb - Collector Base
Photocurrent -
µA
.1
1
10
IF - LED Current - mA
100
Figure 6. Collector-emitter current versus temperature
and LED current
35
Ice - Collector Current - mA
Figure 10. Normalized photocurrent versus If and
temperature
10
Normalized to:
Normalized Photocurrent
30
25
20
15
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
25°C
85°C
70°C
50°C
If = 10ma, Ta = 25°C
1
.1
NIB-Ta=-20°C
NIb,Ta=25°C
NIb,Ta=50°C
NIb,Ta=70°C
.01
.1
1
If LED Current mA
10
100
Figure 7. Collector-emitter leakage current versus
temperature
g
p
Iceo - Collector-Emitter - nA
Figure 11. Normalized non-saturated HFE versus
base current and temperature
1.2
NHFE - Normalized HFE
5
10
4
10
3
10
10 2
10
10
1
0
Vce = 10V
TYPICAL
70°C
50°C
1.0
0.8
0.6
0.4
1
25°C
-20°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25°C
10 -1
10 -2
-20
0
20
40
60
80
100
Ta - Ambient Temperature -
°C
10
100
Ib - Base Current -
µA
1000
Figure 8. Normalized CTRcb versus LED current
and temperature
1.5
NCTRcb - Normalized CTRcb
Figure 12. Normalized saturated HFE versus base
current and temperature
1.5
NHFE(sat) - Normalized
Saturated HFE
1.0
Normalized to:
IF =10 mA
Vcb = 9.3 V
Ta = 25°C
70°C
1.0
25°C
-20°C
0.5
50°C
Normalized to:
Vce = 10V
Ib = 20µA
Ta = 25°C
0.5
25°C
50°C
70°C
Vce = 0.4V
0.0
1
10
100
Ib - Base Current - (µA)
1000
0.0
.1
1
10
IF - LED Current - mA
100
IL/ILD/ILQ74
5–3
Figure 13. Propagation delay versus collector load resis-
tor
1000
tpLH - Propagation Delay -
µs
Figure 14. Propagation delay versus collector load resis-
tor
1000
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpHL
2.5
tpHL - Propagation Delay -
µs
tpHL - Propagation Delay -
µs
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpHL
2.5
100
2.0
tpLH - Propagation Delay -
µs
100
2.0
10
tpLH
1
1.5
10
tpLH
1
1.5
1.0
.1
1
10
100
RL - Collector Load Resistor - KΩ
1.0
.1
1
10
RL - Collector Load Resistor - KΩ
100
IL/ILD/ILQ74
5–4
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