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UP03390

Description
Silicon NPN epitaxial planar type
CategoryDiscrete semiconductor    The transistor   
File Size106KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UP03390 Overview

Silicon NPN epitaxial planar type

UP03390 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F5
JESD-609 codee6
Humidity sensitivity level1
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Composite Transistors
UP03390
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For digital circuits
5
(0.30)
4
0.20
–0.02
+0.05
0.10
±0.02
1.20
±0.05
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
1
1.00
±0.05
1.60
±0.05
Basic Part Number
UNR1114
+
UNR1213
Display at No.1 lead
0.55
±0.05
(0.20)
2
3
(0.50) (0.50)
(0.20)
Features
1.60
±0.05
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
−50
−50
−100
125
125
−55
to
+125
Unit
V
V
mA
V
V
mA
mW
°C
°C
R2
47 kΩ
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
0 to 0.02
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SSMini5-F2 Package
Marking Symbol: EX
Internal Connection
(C1,B2)
5
(C2)
4
R1
10 kΩ
Tr1
R1
Tr2
R2
47 kΩ
1
(E1)
2
47 kΩ
3
(B1) (E2)
0.10 max
Publication date: August 2004
SJJ00293AED
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