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IMB8A

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size63KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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IMB8A Overview

General purpose (dual digital transistors)

IMB8A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistors
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
General purpose (dual digital transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
!
Features
1) Two DTA114T chips in a EMT or UMT or SMT package.
!
Equivalent circuit
EMA4 / UMA4N
(3)
(2)
(1)
FMA4A
(3)
(4)
(5)
EMB4 / UMB4N
(3)
(2)
(1)
IMB4A
(4)
(5)
(6)
UMB8N
(3)
(2)
(1)
IMB8A
(4)
(5)
(6)
R
1
R
1
R
1
R
1
R
1
R
1
R
1
R
1
R
1
(4)
(5)
(2)
(1)
(4)
(5)
(6)
(3)
R
1
(2)
(1)
R
1
(4) (5)
(6)
R
1
(3) (2)
(1)
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
FMA4A / IMB4A / IMB8A
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
−50
−50
−5
−100
150(TOTAL)
300(TOTAL)
150
−55
~
+150
Unit
V
V
V
mA
mW
∗1
∗2
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
°C
°C
!
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
−50
−50
−5
100
7
Typ.
250
250
10
Max.
−0.5
−0.5
−0.3
600
13
Unit
V
V
V
µA
µA
V
MHz
kΩ
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
V
EB
=−4V
Conditions
I
C
/I
B
=−10mA/−1mA
V
CE
=−5V,
I
C
=−1mA
V
CE
=−10V,
I
E
=5mA,
f=100MHz
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMA4
EMT5
A4
T2R
8000
UMA4N
UMT5
A4
TR
3000
EMB4
EMT6
B4
T2R
8000
UMB4N
UMT6
B4
TN
3000
UMB8N
UMT6
B8
TR
3000
FMA4A
SMT5
A4
T148
3000
IMB4A
SMT6
B4
T110
3000
IMB8A
SMT6
B8
T108
3000

IMB8A Related Products

IMB8A UMB8N UMB4N UMA4N EMA4 EMB4 FMA4A IMB4A
Description General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors)
Is it Rohs certified? conform to conform to conform to conform to - - conform to conform to
Reach Compliance Code unknow compli compli compli - - compli compli
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A - - 0.1 A 0.1 A
Minimum DC current gain (hFE) 100 100 100 100 - - 100 100
Number of components 2 2 2 2 - - 2 2
Polarity/channel type PNP PNP PNP PNP - - PNP PNP
surface mount YES YES YES YES - - YES YES
Transistor component materials SILICON SILICON SILICON SILICON - - SILICON SILICON
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