CAT28C64BNI-15T datasheet, PDF

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CAT28C64BNI-15T: Description8KX8 EEPROM 5V, 150ns, PQCC32, PLASTIC, LCC-32; Categorystorage storage; File Size75KB，13 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT28C64BNI-15T Overview

8KX8 EEPROM 5V, 150ns, PQCC32, PLASTIC, LCC-32

CAT28C64BNI-15T Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	QFJ
package instruction	PLASTIC, LCC-32
Contacts	32
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	150 ns
command user interface	NO
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
length	13.965 mm
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	32 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
width	11.425 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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CAT28C64B

64K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast read access times:

Commercial, industrial and automotive

– 90/120/150ns

Low power CMOS dissipation:

temperature ranges

Automatic page write operation:

– Active: 25 mA max.

– Standby: 100

A max.

Simple write operation:

– 1 to 32 bytes in 5ms

– Page load timer

End of write detection:

– On-chip address and data latches

– Self-timed write cycle with auto-clear

Fast write cycle time:

– Toggle bit

–

DATA

polling

100,000 program/erase cycles

100 year data retention

– 5ms max.

CMOS and TTL compatible I/O

Hardware and software write protection

DESCRIPTION

The CAT28C64B is a fast, low power, 5V-only CMOS

Parallel EEPROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C64B features hardware and software write

protection.

The CAT28C64B is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC-

approved 28-pin DIP, TSOP, SOIC, or, 32-pin PLCC

package .

BLOCK DIAGRAM

A5–A12

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

8,192 x 8

EEPROM

ARRAY

32 BYTE PAGE

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

LOGIC

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

I/O0–I/O7

A0–A4

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. MD-1011, Rev. I

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