Bulletin I27236 07/06
GA200SA60UP
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for minimum saturation voltage
and operating frequencies up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package ( 2,500 Volt AC/RMS)
• Very low internal inductance (
≤
5 nH typ.)
• Industry standard outline
• UL Pending
• Totally Lead-Free
C
Ultra-Fast
TM
Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.60V
@V
GE
= 15V, I
C
= 100A
n-channel
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies
≥
20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
SOT-227
Max.
600
200
100
400
400
± 20
160
2500
500
200
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Units
V
A
V
mJ
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
0.05
30
Max.
0.25
–––
–––
Units
°C/W
gm
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GA200SA60UP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
DV
(BR)CES
/DT
J
V
CE(ON)
V
GE(th)
ΔV
GE(th)
/ΔT
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600 —
—
V
V
GE
= 0V, I
C
= 250μA
Emitter-to-Collector Breakdown Voltage
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.38 —
V/°C V
GE
= 0V, I
C
= 10 mA
— 1.60 1.9
I
C
= 100A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
— 1.92 —
I
C
= 200A
See Fig.2, 5
V
— 1.54 —
I
C
= 100A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250μA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C V
CE
= V
GE
, I
C
= 2.0 mA
Forward Transconductance
79
—
S
V
CE
= 100V, I
C
= 100A
—
—
1.0
V
GE
= 0V, V
CE
= 600V
mA
Zero Gate Voltage Collector Current
—
—
10
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±250 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 2.0Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
770
100
260
54
79
130
300
0.98
3.48
4.46
56
75
160
460
7.24
5.0
16500
1000
200
Max. Units
Conditions
1200
I
C
= 100A
150
nC V
CC
= 400V
See Fig. 8
380
V
GE
= 15V
—
—
T
J
= 25°C
ns
200
I
C
= 100A, V
CC
= 480V
450
V
GE
= 15V, R
G
= 2.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
7.6
—
T
J
= 150°C,
—
I
C
= 100A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 2.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 10, 11, 14
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
2
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GA200SA60UP
200
For both:
Triangular wave:
160
Load Current ( A )
Duty cycle: 50%
TJ= 125°C
Tsink 90°C
=
Gate drive as specified
Power Dissipation = 140W
Clamp voltage:
80% of rated
120
Square wave:
60% of rated
voltage
80
40
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
°
C
T
J
= 25
°
C
100
100
T
J
= 150
°
C
T
J
= 25
°
C
V
GE
= 15V
20µs PULSE WIDTH
1.0
1.5
2.0
2.5
3.0
3.5
10
0.5
10
5.0
V
CE
= 25V
20µs PULSE WIDTH
5µs PULSE WIDTH
6.0
7.0
8.0
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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GA200SA60UP
200
3.0
150
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 400 A
Maximum DC Collector Current(A)
100
2.0
I
C
= 200 A
I
C
= 100 A
50
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =t
1
/ t
2
2. Peak T= P
DM
x Z
thJC
+ T
C
J
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA200SA60UP
30000
25000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 110A
16
C, Capacitance (pF)
20000
Cies
12
15000
10000
Coes
Cres
8
5000
4
0
1
10
100
0
V
CE
, Collector-to-Emitter Voltage (V)
0
200
400
600
800
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
60
Total Switching Losses (mJ)
40
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
50
I
C
= 200A
100
R
G
= Ohm
2.0
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
400
A
I
=
350
A
I
C
=
200
A
10
30
I
C
=
100
A
20
10
0
0
10
G
20
30
40
50
60
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance (Ohm)
R , Gate Resistance (Ω)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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