5961-00-950-9887 datasheet, PDF

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5961-00-950-9887: DescriptionZener Diode, 6.2V V(Z), 5%, 0.25W; CategoryDiscrete semiconductor diode; File Size64KB，17 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5961-00-950-9887 Overview

Zener Diode, 6.2V V(Z), 5%, 0.25W

5961-00-950-9887 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode type	ZENER DIODE
Maximum dynamic impedance	15 Ω
Number of components	1
Maximum operating temperature	175 °C
Maximum power dissipation	0.25 W
Nominal reference voltage	6.2 V
surface mount	NO
Maximum voltage tolerance	5%
Working test current	7.5 mA
Base Number Matches	1

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INCHES POUND

The documentation process conversion measures necessary to

comply with this revision shall be completed by 29 January 2000.

MIL-PRF-19500/159K

19 November 1999

SUPERSEDING

MIL-PRF-19500/159J

1 July 1998

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,

TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1,

1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC;

RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H;

JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 6.2 volts

5 percent, silicon, voltage-reference diodes. Five levels of

product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are

provided for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each

encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

1.2 Physical dimensions. See figure 1 (similar to DO-7 and DO-35), figure 2 (similar to DO-213AA), figure 3 (JANHCA and JANKCA),

figure 4 (JANHCB and JANKCB) and figure 5 (JANHCD and JANKCD).

1.3 Maximum ratings. (Unless otherwise specified, T

= +25

C).

STG

and T

See note 1

Power derating

above T

= +25

500

-55 to +175

mA dc

mW/

3.33

NOTE;

1. To guarantee voltage temperature stability, it is necessary to maintain the proper I

= 7.5 mA dc.

1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T

= +25

Type

∆

(voltage temperature

stability)

= 7.5 mA dc

Min

mV dc

1N821-1, 1N821UR-1

1N823-1, 1N823UR-1

1N825-1, 1N825UR-1

1N827-1, 1N827UR-1

1N829-1, 1N829UR-1

ohms

Volts

5.89

Max

Volts

6.51

2.0

= 7.5 mA dc

= 3.0 V

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-19500/159K

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

MILITARY

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense

Automated Printing Service, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for

related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,

however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified products list before contract award (see 4.2 and 6.3).

3.2 Associated specification. The individual item performance requirements shall be in accordance with MIL-PRF-19500, and as

specified herein.

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500.

3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.

3.4.1 Lead finish. Unless otherwise specified herein, lead finish shall be solderable in accordance with MIL-PRF-19500,

MIL-STD-750, and herein.

3.5 Diode construction. These devices shall be constructed in a manner and using material which enable the diodes to meet the

applicable requirements of MIL-PRF-19500 and this document.

3.5.1 Dash-one construction. Shall be as specified in MIL-PRF-19500.

3.5.2 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with MIL-PRF-19500.

3.5.3 JANHC and JANKC construction. JANHC and JANKC construction may differ in die size and bonding pad layout provided the

manufacturing technology is identical (example: diffused junction, alloy junction).

5961-00-950-9887 Related Products

	5961-00-950-9887	5961-01-019-4965	5961-00-254-2990
Description	Zener Diode, 6.2V V(Z), 5%, 0.25W	Zener Diode, 6.2V V(Z), 5%, 0.25W	Zener Diode, 6.2V V(Z), 5%, 0.25W
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	compliant	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Diode type	ZENER DIODE	ZENER DIODE	ZENER DIODE
Maximum dynamic impedance	15 Ω	15 Ω	15 Ω
Number of components	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C
Maximum power dissipation	0.25 W	0.25 W	0.25 W
Nominal reference voltage	6.2 V	6.2 V	6.2 V
surface mount	NO	NO	NO
Maximum voltage tolerance	5%	5%	5%
Working test current	7.5 mA	7.5 mA	7.5 mA
Maker	Microsemi	Microsemi	-
Base Number Matches	1	1	-

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