K8D6316UBM-LI090 datasheet, PDF

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K8D6316UBM-LI090: DescriptionFlash, 4MX16, 90ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48; Categorystorage storage; File Size1MB，48 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K8D6316UBM-LI090 Overview

Flash, 4MX16, 90ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48

K8D6316UBM-LI090 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	90 ns
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	9 mm
memory density	67108864 bit
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	2
Number of functions	1
Number of departments/size	8,127
Number of terminals	48
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1 mm
Department size	8K,64K
Maximum standby current	0.00003 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
switch bit	YES
type	NOR TYPE
width	6 mm
Base Number Matches	1

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K8D6x16UTM / K8D6x16UBM

NOR FLASH MEMORY

Document Title

64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

Revision History

Revision No. History

0.0

1.0

1.1

Initial Draft

Final Specification

Revised

- Release the stand-by current from typ. 5uA(max. 18uA) to typ.

10uA(max. 30uA).

Not support 48TSOP1 Package

Not support 16M/16M BANK partition

Support 48TSOP1 Package

Support 48TSOP1 Lead Free Package

Support 48FBGA Leaded/Lead Free Package

Draft Date

January 10, 2002

May 22, 2002

June 18, 2003

Remark

Preliminary

Final

1.2

November 18, 2003

1.3

1.4

1.5

1.6

July 22, 2004

September 16, 2004

March 16, 2005

"Asynchronous mode may not support read following four sequential September 08, 2006

invalid read condition within 200ns." is added

Revision 1.6

September, 2006

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