IN74ACT640
O
CTAL
3-S
TATE
I
NVERTING
B
US
T
RANSCEIVER
High-Speed Silicon-Gate CMOS
The IN74ACT640 is identical in pinout to the LS/ALS640,
HC/HCT640. The IN74ACT640 may be used as a level converter
for interfacing TTL or NMOS outputs to High Speed CMOS
inputs.
The IN74ACT640 is a 3-state transceiver that is used for 2-
way asynchronous communication between data buses. The
device has an active-low Output Enable pin, which is used to
place the I/O ports into high-impedance states. The Direction
control determines whether data flows from A to B or from B to A.
•
TTL/NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0
µA;
0.1
µA
@ 25°C
Outputs Source/Sink 24 mA
•
•
•
•
ORDERING INFORMATION
IN74ACT640N Plastic
IN74ACT640DW SOIC
T
A
= -40° to 85° C for all
packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Control Inputs
Output Direction
Enable
L
L
Operation
Data
Transmitted
from Bus B to
Bus A (inverted)
Data
Transmitted
from Bus A to
Bus B (inverted)
Buses Isolated
(High
Impedance
State)
PIN 20=V
CC
PIN 10 = GND
L
H
H
X
X = don’t care
1
IN74ACT640
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
mA
±20
I
OUT
DC Output Sink/Source Current, per Pin
mA
±50
I
CC
DC Supply Current, V
CC
and GND Pins
mA
±50
P
D
Power Dissipation in Still Air, Plastic DIP+
750
mW
SOIC Package+
500
Tstg
Storage Temperature
-65 to +150
°C
260
T
L
Lead Temperature, 1 mm from Case for 10
°C
Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage (Referenced to GND)
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to
GND)
T
J
Junction Temperature (PDIP)
T
A
Operating Temperature, All Package Types
I
OH
Output Current - High
I
OL
Output Current - Low
t
r
, t
f
Input Rise and Fall Time
*
V
CC
=4.5 V
V
CC
=5.5 V
(except Schmitt Inputs)
*
V
IN
from 0.8 V to 2.0 V
Min
4.5
0
Max
5.5
V
CC
140
+85
-24
24
10
8.0
Unit
V
V
°C
°C
mA
mA
ns/V
-40
0
0
This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND≤(V
IN
or V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V
CC
). Unused outputs must be left open.
2
IN74ACT640
DC ELECTRICAL CHARACTERISTICS(Voltages
Referenced to GND)
Guaranteed
V
CC
Limits
Symbol
Parameter
Test Conditions
V
25
°C
-40°C to
85°C
V
IH
Minimum
High- V
OUT
=0.1 V or V
CC
-0.1 V 4.5
2.0
2.0
Level
Input
5.5
2.0
2.0
Voltage
V
IL
Maximum Low - V
OUT
=0.1 V or V
CC
-0.1 V 4.5
0.8
0.8
Level
Input
5.5
0.8
0.8
Voltage
V
OH
Minimum
High- I
OUT
≤
-50
µA
4.5
4.4
4.4
Level
Output
5.5
5.4
5.4
Voltage
*
V
IN
=V
IH
or
V
IL
3.76
3.86
I
OH
=-24
mA 4.5
4.76
4.86
5.5
I
OH
=-24 mA
V
OL
Maximum
Low- I
OUT
≤
50
µA
4.5
0.1
0.1
Level
Output
5.5
0.1
0.1
Voltage
*
V
IN
=V
IH
or
V
IL
0.44
0.36
I
OL
=24
mA 4.5
0.44
0.36
5.5
I
OL
=24 mA
I
IN
Maximum Input V
IN
=V
CC
or GND
5.5
±0.1
±1.0
Leakage Current
5.5
1.5
Additional Max. V
IN
=V
CC
- 2.1 V
∆I
CCT
I
CC
/Input
I
OZ
Maximum Three- V
IN
(OE)= V
IH
or V
IL
5.5
±0.6
±6.0
State
Leakage V
IN
=V
CC
or
GND
Current
V
OUT
=V
CC
or GND
V
OLD
=1.65 V Max
I
OLD
+Minimum
5.5
75
Dynamic Output
Current
V
OHD
=3.85 V Min
I
OHD
+Minimum
5.5
-75
Dynamic Output
Current
V
IN
=V
CC
or GND
I
CC
Maximum
5.5
8.0
80
Quiescent Supply
Current
(per Package)
*
All outputs loaded; thresholds on input associated with output under test.
+Maximum test duration 2.0 ms, one output loaded at a time.
Unit
V
V
V
V
µA
mA
µA
mA
mA
µA
3
IN74ACT640
AC ELECTRICAL CHARACTERISTICS(V
CC
=5.0 V
±
10%, C
L
=50pF,Input t
r
=t
f
=3.0 ns)
Guaranteed Limits
Unit
Symbol
Parameter
25
°C
-40°C to
85°C
Min Max Min Max
t
PLH
Propagation Delay, A to B or B to A 1.5
1.5
1.0
8.5
ns
(Figure 1)
t
PHL
Propagation Delay, A to B or B to A 1.5
8.0
1.0
9.0
ns
(Figure 1)
t
PZH
Propagation Delay,Direction or Output 1.5 10.0 1.0
11.0
ns
Enable to A or B (Figure 2)
t
PZL
Propagation Delay,Direction or Output 1.5 10.0 1.0
11.0
ns
Enable to A or B (Figure 2)
t
PHZ
Propagation Delay,Direction or Output 1.5 10.0 1.0
11.0
ns
Enable to A or B (Figure 2)
t
PLZ
Propagation Delay,Direction or Output 1.5 10.0 1.0
11.0
ns
Enable to A or B (Figure 2)
C
IN
Maximum Input Capacitance
4.5
4.5
pF
C
OUT
Maximum Three-State I/O Capacitance
15
15
pF
(Output in High-Impedance State)
Typical @25°C,V
CC
=5.0 V
45
C
PD
Power Dissipation Capacitance
pF
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
4
IN74ACT640
EXPANDED LOGIC DIAGRAM
5
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