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APT80GP60B2

Description
POWER MOS 7 IGBT
CategoryDiscrete semiconductor    The transistor   
File Size92KB,6 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet Parametric View All

APT80GP60B2 Overview

POWER MOS 7 IGBT

APT80GP60B2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerADPOW
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)100 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1041 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)284 ns
Nominal on time (ton)87 ns
APT80GP60B2
600V
POWER MOS 7 IGBT
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
T-Max
TM
®
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 45A
• 100 kHz operation @ 400V, 72A
• SSOA rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
1
7
7
All Ratings: T
C
= 25°C unless otherwise specified.
APT80GP60B2
UNIT
600
±20
±30
@ T
C
= 25°C
@ T
C
= 110°C
Volts
100
100
330
330A @ 600V
1041
-55 to 150
300
Watts
°C
Amps
@ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
1.0
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
I
CES
I
GES
mA
nA
10-2003
050-7425
Rev B
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
5
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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