Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02170
Features
• Cascadable 50
Ω
Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-Ceramic
Surface Mount Package
feedback amplifier housed in a
hermetic, high reliability package.
It is designed for narrow or wide
bandwidth industrial and military
applications that require high gain
and low noise IF or RF
amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz f
T
,
25 GHz f
MAX
, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
70 mil Package
Description
The INA-02170 is a low noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
Typical Biasing Configuration
V
CC
> 8 GHz
RFC (Optional)
R
bias
C
block
RF IN
1
2
4
3
V
d
= 5.5 V
C
block
RF OUT
6-93
5965-9674E
INA-02170 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
400 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 144°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
INA-02170 Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
ISO
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
[2]
Reverse Isolation (|S
12
|
2
)
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.01 to 1.0 GHz
Units
dB
dB
GHz
dB
Min.
29.0
Typ.
31.5
±
1.5
1.0
39
1.4:1
1.5:1
Max.
34.0
dB
dBm
dBm
psec
V
mV/°C
4.0
2.0
11
23
350
5.5
+10
2.5
7.0
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (G
P
).
INA-02170 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 35 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
.05
.05
.06
.09
.12
.15
.17
.17
.18
.19
.19
.20
.21
.22
.23
.25
.29
–8
–31
–85
–110
–129
–140
–151
–159
–174
179
173
166
162
159
155
150
144
32.5
32.5
32.5
32.3
32.0
31.7
31.4
31.0
30.2
29.2
27.8
26.1
24.2
22.3
20.4
16.7
13.1
42.32
42.32
42.05
41.06
39.82
38.43
37.08
35.49
32.45
28.70
24.51
20.18
16.26
13.02
10.45
6.82
4.51
–2
–7
–14
–27
–40
–53
–65
–77
–101
–126
–149
–171
170
153
139
112
87
6-94
–39.2
–38.9
–38.0
–38.8
–38.8
–40.2
–40.0
–39.6
–38.2
–38.2
–37.5
–36.2
–36.3
–34.1
–33.0
–33.3
–31.8
.011
.011
.013
.011
.011
.010
.010
.011
.012
.012
.013
.015
.015
.020
.022
.022
.026
14
14
10
5
1
19
8
23
23
17
27
35
34
46
37
32
32
.19
.19
.19
.18
.17
.16
.16
.16
.16
.16
.15
.14
.12
.10
.07
.05
.04
–1
–5
–10
–16
–21
–25
–27
–30
–40
–53
–71
–102
–172
144
117
95
78
1.26
1.26
1.15
1.29
1.32
1.45
1.48
1.43
1.43
1.55
1.66
1.73
2.07
1.94
2.17
3.19
3.96
INA-02170 Typical Performance, T
A
= 25°C
(unless otherwise noted)
35
Gain Flat to DC
40
30
3.0
I
d
(mA)
30
3.5
50
T
MS
= +125°C
T
MS
= +25°C
T
MS
= –55°C
G
p
(dB)
30
35
0.1 GHz
0.5 GHz
1.0 GHz
1.5 GHz
NF (dB)
G
p
(dB)
25
2.5
25
20
20
2.0
10
20
15
.01 .02
.05
0.1 0.2
0.5
1.0
FREQUENCY (GHz)
1.5
2.0
0
0
2
4
V
d
(V)
6
8
15
20
30
I
d
(mA)
40
50
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
A
= 25°C, I
d
= 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
32
G
p
(dB)
31
30
P
1 dB
P
1 dB
(dBm)
P
1 dB
(dBm)
29
14
12
3.0
NF (dB)
2.5
2.0
1.0
1.0
–55
–25
+25
+85
+125
NF
10
8
G
p
15
I
d
= 40 mA
12
3.5
3.0
I
d
= 35 mA
NF (dB)
9
I
d
= 30 mA
6
2.0
3
I
d
= 30 to 40 mA
2.5
0
.02
.05
0.1
0.2
0.5
1.0
2.0
1.5
.02
.05
0.1
0.2
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, I
d
= 35 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.70
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
6-95
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