DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5436
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Contains same chip as 2SC5186
• Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
2SC5436
2SC5436-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5
3
2
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10104EJ01V0DS (1st edition)
(Previous No. P13079EJ1V0DS00)
Date Published February 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 1998
©
NEC Compound Semiconductor Devices 2002
2SC5436
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 20 mA
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
MIN.
–
–
70
9.0
7.0
8.5
6.0
–
–
–
TYP.
–
–
–
14.0
12.0
10.0
9.0
1.4
1.4
0.4
MAX.
100
100
130
–
–
–
–
2.0
2.0
0.8
Unit
nA
nA
–
GHz
GHz
dB
dB
dB
dB
pF
f
T
f
T
S
21e
2
S
21e
2
NF
NF
C
re
Note 2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
EB
TN
70 to 100
FB
TP
90 to 130
2
Data Sheet PU10104EJ01V0DS
2SC5436
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
150
Total Power Dissipation P
tot
(mW)
Free Air
125
100
90
0.5
75
50
25
0.2
0
25
50
75
100
125
150
0.1
1
2
5
10
20
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
40
20
30
15
20
10
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
1.0
2.0
3.0
4.0
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
15
V
CE
= 2 V
DC Current Gain h
FE
200
V
CE
= 2 V
100
50
1V
10
1V
20
10
5
1
2
5
10
20
50
100
0.7
1
2
3
5
7
10
20 30
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet PU10104EJ01V0DS
3
Embedded System
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