DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
BAV100 to BAV103
General purpose diodes
Product specification
Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors
Product specification
General purpose diodes
FEATURES
•
Small hermetically sealed glass
SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage:
max. 50 V, 100 V, 150 V and 200 V
respectively
•
Repetitive peak reverse voltage:
max. 60 V, 120 V, 200 V and 250 V
respectively
•
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
•
Switching in industrial equipment
e.g. oscilloscopes, digital
voltmeters and video output stages
in colour television.
Cathode indicated by green band.
handbook, 4 columns
BAV100 to BAV103
DESCRIPTION
The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.
k
a
MAM061
Fig.1 Simplified outline (SOD80C) and symbol.
1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BAV100
BAV101
BAV102
BAV103
V
R
continuous reverse voltage
BAV100
BAV101
BAV102
BAV103
I
F
I
FRM
I
FSM
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
see Fig.2; note 1
PARAMETER
repetitive peak reverse voltage
CONDITIONS
BAV100 to BAV103
MIN.
−
−
−
−
−
−
−
−
−
−
MAX.
60
120
200
250
50
100
150
200
250
625
V
V
V
V
V
V
V
V
UNIT
mA
mA
−
−
−
−
−65
−
9
3
1
400
+175
175
A
A
A
mW
°C
°C
1996 Sep 17
3
Philips Semiconductors
Product specification
General purpose diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
BAV100
BAV101
BAV102
BAV103
C
d
t
rr
diode capacitance
reverse recovery time
see Fig.5
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°C
V
R
= 100 V
V
R
= 100 V; T
j
= 150
°C
V
R
= 150 V
V
R
= 150 V; T
j
= 150
°C
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA; see Fig.8
CONDITIONS
BAV100 to BAV103
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
1.0
1.25
100
100
100
100
100
100
100
100
5
50
V
V
UNIT
nA
µA
nA
µA
nA
µA
nA
µA
pF
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
300
375
UNIT
K/W
K/W
1996 Sep 17
4
Philips Semiconductors
Product specification
General purpose diodes
GRAPHICAL DATA
BAV100 to BAV103
handbook, halfpage
300
MBH278
handbook, halfpage
600
MBG459
IF
(mA)
200
IF
(mA)
400
(1)
(2)
(3)
100
200
0
0
100
Tamb ( C)
o
0
200
0
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
handbook, full pagewidth
10
2
MBG703
IFSM
(A)
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
5
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