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3N173

Description
50mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, TO-72, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

3N173 Overview

50mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, TO-72, 4 PIN

3N173 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-72
package instructionTO-72, 4 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance350 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.375 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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