INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
BUW41/A/B
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 300V(Min)- BUW41
= 350V(Min)- BUW41A
= 400V(Min)- BUW41B
·High
Switching Speed
·High
Power Dissipation
APPLICATIONS
·Designed
for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
BUW41
V
CEV
Collector-Emitter Voltage
V
BE
= -1.5V
BUW41A
BUW41B
BUW41
V
CEO(SUS)
Collector-Emitter Voltage
BUW41A
BUW41B
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
450
550
650
300
350
400
6
5
8
100
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUW41
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BUW41A
BUW41B
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BUW41
I
CEV
Collector
Cutoff Current
BUW41A
BUW41B
I
EBO
h
FE
f
T
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
I
E
= 1mA ; I
C
= 0
I
C
= 5A; I
B
= 1A
I
C
= 5A; I
B
= 1A,T
C
= 150℃
B
B
BUW41/A/B
CONDITIONS
MIN
300
TYP.
MAX
UNIT
I
C
= 200mA ; I
B
= 0
350
400
6
1.0
2.0
1.6
0.1
1.0
0.1
1.0
0.1
1.0
1.0
10
15
V
V
V
V
I
C
= 5A; I
B
= 1A
B
V
CE
= 450V;V
BE
= -1.5V
V
CE
= 450V;V
BE
= -1.5V,T
C
= 150℃
V
CE
= 550V;V
BE
= -1.5V
V
CE
= 550V;V
BE
= -1.5V,T
C
= 150℃
V
CE
= 650V;V
BE
= -1.5V
V
CE
= 650V;V
BE
= -1.5V,T
C
= 150℃
V
EB
= 6V; I
C
=0
I
C
= 5A ; V
CE
= 3V
I
C
= 0.5A ;V
CE
= 10V
mA
mA
MHz
isc Website：www.iscsemi.cn
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