PD - 94180
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Advanced Process Technology
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Ultra Low On-Resistance
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Optimized for SMPS Applications
Description
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
HEXFET
®
Power MOSFET
D
IRFZ34VS
IRFZ34VL
V
DSS
= 60V
R
DS(on)
= 28mΩ
G
S
I
D
= 30A
D
2
Pak
IRFZ34VS
TO-262
IRFZ34VL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
30
21
120
70
0.46
± 20
30
7.0
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Typ.
–––
–––
Max.
2.15
40
Units
°C/W
www.irf.com
1
02/14/02
IRFZ34VS/IRFZ34VL
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
60
–––
–––
2.0
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.062
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
65
31
40
4.5
7.5
1120
250
59
260
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
28
mΩ V
GS
= 10V, I
D
= 18A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 18A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
49
I
D
= 30A
12
nC
V
DS
= 48V
18
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 30A
ns
–––
R
G
= 12Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
81
mJ
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
30
––– –––
showing the
A
G
integral reverse
––– ––– 120
S
p-n junction diode.
––– ––– 1.6
V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
––– 70 110
ns
T
J
= 25°C, I
F
= 30A
––– 99 150
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 180µH
R
G
= 25Ω, I
AS
= 30A. (See Figure 12)
I
SD
≤
30A, di/dt
≤
250A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
Uses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
2
www.irf.com
IRFZ34VS/IRFZ34VL
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T = 175 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.5
I
D
= 30A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
3.0
2.5
T
J
= 25
°
C
T
J
= 175
°
C
100
2.0
1.5
10
1.0
1
4
5
6
7
V DS = 50V
20µs PULSE WIDTH
9
10
8
11
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFZ34VS/IRFZ34VL
2000
V
GS
, Gate-to-Source Voltage (V)
1600
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 30A
16
C, Capacitance (pF)
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
1200
Ciss
12
800
8
400
C
oss
C
rss
4
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
=
175
°
C
I
D
, Drain Current (A)
100
100
10us
10
100us
10
T
J
= 25
°
C
1
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1ms
10ms
100
1
10
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFZ34VS/IRFZ34VL
30
V
DS
25
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
20
-
V
DD
10V
15
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.02
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.0001
0.001
P
DM
t
1
t
2
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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