IS610X, IS611X
IS610, IS611
PHOTON COUPLED BILATERAL
ANALOG FET
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 2 available lead forms : -
- STD
-
G form
DESCRIPTION
The IS610, IS611 are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The IS610, IS611 are mounted in a
standard 6pin dual in line plastic package.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
As a remote variable resistor
l
≤
100
Ω
to
≥
300M
Ω
l
≥
99.9% Linearity
l
≤
15 pF Shunt Capacitance
l
≥
100G
Ω
I/O Isolation Resistance
As an Analog Signal Switch
l
Extremely low Offset Voltage
l
60V pk-pk Signal Capability
l
No Charge Injection or Latchup
l
ton, toff
≤
15
µ
s
APPLICATIONS
As a remote variable resistor
l
Isolated variable attenuator
l
Automatic gain control
l
Active filter fine tuning / band switching
OPTION SM
SURFACE MOUNT
OPTION G
2.54
7.0
6.0
7.62
max.
1
2
3
Dimensions in mm
6
5
4
8.3 max.
5.1
max.
3.9
3.1
15°
Max
0.5
min.
0.48
0.25
APPLICATIONS (cont.)
As an Analog Signal Switch
l
Isolated sample and hold circuit
l
Multiplexed, optically isolated A/D conversion
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Breakdown Voltage
Detector Current (continuous)
Power Dissipation
±30V
±100mA
300mW
60mA
6V
100mW
8.3 max
1.2
0.6
10.2
9.5
1.4
0.9
0.26
10.16
POWER DISSIPATION
Total Power Dissipation
350mW
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
19/4/99
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91069AAS/A2
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Breakdown Voltage - V(
BR
)
46
(Note 2)
Off-state Dark Current - I
46
MIN TYP MAX UNITS
1.1
5
10
30
50
50
Off-state Resistance - r
46
Capacitance - C
46
Coupled
On-state Resistance - r
46
(Note 2)
IS611
IS610
On-state Resistance - r
64
(Note 2)
IS611
IS610
300
15
1.75
V
V
µ
A
V
nA
µ
A
ΜΩ
pF
TEST CONDITION
I
F
= 16mA
I
R
= 10
µ
A
V
R
= 5V
I
46
=
10µ
A,I
F
= 0
V
46
=
15
V, I
F
= 0,
T
A
= 25°C
V
46
=
15
V, I
F
= 0,
T
A
= 100°C
V
46
=
15
V, I
F
= 0
V
46
=
0
, I
F
= 0,
f = 1 MHz
I
F
= 16mA, I
46
=
100µ
A
I
F
= 16mA, I
46
=
100µ
A
I
F
= 16mA, I
64
=
100µ
A
I
F
= 16mA, I
64
=
100µ
A
See note 1
See note 1
V
IO
= 500V (note 1)
V
IO
= 0, f =1MHz
I
F
= 16mA, V
46
= 5V,
R
L
= 50
Ω
I
F
= 16mA, f = 1kHz
I
46
=
25µ
A RMS
Output
(
either
polarity)
170
200
Ω
Ω
Ω
Ω
170
200
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Input-output Capacitance
Cf
Turn-on Time
ton
Turn-off Time
toff
Resistance, non-linearity and asymmetry
5300
7500
10
11
2
25
25
0.1
V
RMS
V
PK
Ω
pF
µ
s
µ
s
%
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
19/4/99
DB91069-AAS/A2
Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Region of Linear Resistance
(mV)
(
µ
A)
100
40
20
10
4
2
0
100
1000
10k
100k
On-state resistance r (on) (
Ω)
Input Current vs. Input Voltage
100
40
Forward current I
F
(mA)
20
10
4
2
1
0.4
0.2
0.1
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Forward voltage V
F
(V)
19/4/99
On-state Resistance vs. Ambient Temperature
3
Normalized on-state resistance r (on)
Normalized to
I
F
= 16mA
I
46
= 25
µ
A
T
A
= 25 °C
2
1
0.8
0.6
observed
range
median
device
0.4
-50
-25
0
25
50
75
100
Ambient temperature T
A
( °C )
Normalized Off-state current vs.
Ambient Temperature
100
maximum
RMS voltage
40
20
maximum
RMS current
Ex
tra
10000
46
Maximum RMS signal voltage V
Maximum RMS signal current I
46
Normalized dark current
1000
10
100
4
po
lat
ed
10
2
0
Normalized to
V
46
= 15V
I
F
= 0
T
A
= 25 °C
0
25
50
75
100
1.0
Ambient temperature T
A
( °C )
Resistive non-linearity vs.
D.C. Bias
5
Change in resistance
∆
r (on)
(%)
4
T
A
= 75°C
25°C
-25°C
3
2
I
46
= 10
µ
A RMS
r (on) =
200Ω
1
0
0
50
100 150
200
250
300
350
D.C. bias voltage V
46
(mV)
DB91069-AAS/A2
Embedded System
京公网安备 11010802033920号
EEWORLD
