EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF9952

Description
Power MOSFET(Vdss=+-30V)
CategoryDiscrete semiconductor    The transistor   
File Size224KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF9952 Overview

Power MOSFET(Vdss=+-30V)

IRF9952 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)44 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)3.5 A
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95135
IRF9952PbF
l
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
7
D1
D1
D2
D2
N-Ch P-Ch
V
DSS
30V
-30V
3
6
4
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.10Ω 0.25Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
SO-8
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
…
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
N-Channel
Maximum
P-Channel
30
± 20
-2.3
-1.8
-10
-1.3
2.0
1.3
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
…
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
‚
Junction and Storage Temperature Range
3.5
2.8
16
1.7
A
W
57
-1.3
mJ
A
mJ
V/ ns
44
2.0
0.25
5.0
-5.0
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
…
Symbol
R
θJA
Limit
62.5
Units
°C/W
www.irf.com
1
09/15/04
What is the use of patents in universities?
When I was a freshman, I got a patent, but now it is still in my dorm room. I feel like it is useless and I don’t know how to promote it. Do you have any good suggestions?...
零下12度半 Talking about work
Schematic diagram of eight-phase traffic light controller
This is the schematic diagram of an eight-phase traffic light controller that I drew as an intern at Sichuan Top Technology Company. I hope experts can give me some pointers....
枫亭幽竹 Microchip MCU
s3c44b0+ucos+uc/fs problem??? Why can't I read and write files???
I have a problem with the file operation when using s3c44b0+ucos+uc/fs. If the file is created by the hardware system, it can be read and written. However, if the file is created on the Windows system...
dingxy Real-time operating system RTOS
Which version of BSL file can be used to burn 2419 chip?
I am so frustrated. I have been trying so hard before. It turns out that the sample provided has a problem. Haha.Now there are new samples, but the BSl version seems to be too low and cannot be burned...
foxin1986 Microcontroller MCU
nios 11.0 version compilation problem
d:/alter/altera11.0/quartus/quartus/nios2eds/bin/gnu/h-i686-mingw32/bin/../lib/gcc/nios2-elf/4.1.2/../../../../nios2-elf/bin/ld.exe: uart.elf section `.text' will not fit in region `epcs_flash_control...
tianma123 FPGA/CPLD
Power consumption optimization design in embedded DSP design
Optimizing power consumption is an important but often elusive design goal for digital signal processor (DSP)-based systems. Today, DSP-based devices often combine multiple applications that were prev...
fish001 DSP and ARM Processors

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 168  1693  1905  492  1456  4  35  39  10  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号