Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
600
600
6.2
3.9
25
±20
125
1.0
570
-55 to 150
300
260
IRFAC42
600
600
5.4
3.4
22
±20
125
1.0
570
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
MIN
600
2.0
-
-
TYP
-
-
-
-
MAX
-
4.0
25
250
UNITS
V
V
µA
µA
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 4)
IRFAC40
IRFAC42
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
IRFAC40
IRFAC42
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON) MAX
, V
GS
= 10V
6.2
5.4
-
-
-
-
-
±100
µA
µA
nA
I
GSS
r
DS(ON)
V
GS
=
±20V
V
GS
= 10V, I
D
= 3.4A (Figures 8, 9)
-
-
-
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 6.2A, V
DSS
= 0.8 x Rated
BV
DSS
, I
G(REF)
= 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
≥
50V, I
D
= 3.4A (Figure 12)
V
DD
= 0.5V x Rated BV
DSS
, I
D
≈
6.2A, R
G
=
9.1Ω, R
L
= 47Ω, V
GS
= 10V (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
4.7
-
-
-
-
-
0.97
1.2
70
13
18
55
20
40
1.2
1.6
-
20
27
83
30
60
Ω
Ω
S
ns
ns
ns
ns
nC
-
-
5.5
20
-
-
nC
nC
5-2
IRFAC40, IRFAC42
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
MIN
-
TYP
1300
160
30
MAX
-
UNITS
pF
pF
pF
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
-
13
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.0
30
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
6.2
25
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 6.2A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
-
200
1.8
-
450
3.8
1.5
940
7.9
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
[align=center]?[img]http://www.yumen.com/attachment/200901/9/450_1231504464lfud.jpg[/img][/align] In the Fuhai Scenic Area at Chengshantou, Rongcheng, there is a large area of ancient buildings magica...
1. In the clock circuit, the crystal oscillator generates oscillations when it is powered on, and the capacitor filters and has consistent capacitance to ensure the identity of the signal. Is this rig...
Ladies and gentlemen, if I build a mesh network, there is a coordinator and N terminals; the purpose is to send the information of the terminal to the coordinator, and the coordinator will send this i...
Dear experts: I am debugging a serial communication module. The problem is that the voltage level of 8962 is 3.3V, and the device I am using is 5V. I would like to ask how to connect the two to solve ...
Is there any expert who can give me some advice: I use the emulator to burn the program into the msp430f149 microcontroller. Where is the program placed? If I read and write the Flash, will I accident...
New energy pure electric vehicles generally accelerate faster than comparable fuel-powered vehicles, both from a standing start and while accelerating. Many believe this is simply due to the motor'...[Details]
In recent years, the government has increasingly supported electric vehicles, and the number of electric vehicles has increased. Observant drivers will notice that there are many more green license...[Details]
Capable of providing precise and efficient thermal management for artificial intelligence computing power, intelligent sensing and autonomous driving systems
Shenzhen, ...[Details]
Have you ever heard stories about "crazy appliances"? Think of microwaves that turn on automatically or ovens that preheat without any human input? With radios and electromagnetic interfaces ubiqui...[Details]
There are many motors that can use thyristor speed control, and they can be used in almost all industries. Various types of motors, such as fans, pumps, AC motors, DC motors, torque motors, single-...[Details]
MQTT Ethernet I/O modules primarily collect I/O port information and transmit data over the network. In addition to being a TCP server, Ethernet I/O modules can also function as TCP clients. Furthe...[Details]
There are more and more electric vehicles. Recently, I have heard some news about electric vehicles performing poorly in winter. I would like to briefly introduce whether heat pump technology is mo...[Details]
The driving mode is not unfamiliar to vehicles. According to the driving mode of the vehicle, there are front-wheel drive, rear-wheel drive and even four-wheel drive. Four-wheel drive is a major se...[Details]
Tires are a very important component for cars. They are related to the driving experience of the vehicle. We are almost inseparable from cars in our daily lives. For tires, according to the role of...[Details]
According to Reuters, citing people familiar with the matter, British semiconductor design company Arm Holdings (NASDAQ:ARM) has hired Rami Sinno, head of Amazon's (NASDAQ:AMZN) artificial intellig...[Details]
Cadence and NVIDIA Collaborate to Revolutionize Power Analysis Technology, Accelerating Development of Billion-Gate AI Designs
Cadence's new Palladium Dynamic Power Analysis applicat...[Details]
The automotive transmission is the foundation of a vehicle's motion. The vehicle's drivetrain transfers engine power to the drive wheels, enabling the vehicle to move. The vehicle's drivetrain cons...[Details]
As AI accelerates across industries, the demand for data center infrastructure is also growing rapidly.
Keysight Technologies recently announced the release of "Beyond the Bottleneck...[Details]
The solution uses AI to detect card-not-present fraud, a payment scam that causes significant losses to businesses.
Beijing, China, August 18, 2025 –
Telesign, a Proximus Global ...[Details]
How does air conditioning affect the range of pure electric vehicles? When I saw the question, my first thought was the impact on power consumption, similar to how air conditioning affects fuel con...[Details]
Talking
京公网安备 11010802033920号
EEWORLD
