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IRFIB41N15D

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size694KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRFIB41N15D Overview

HEXFET Power MOSFET

IRFIB41N15D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)470 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)41 A
Maximum drain current (ID)41 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)48 W
Maximum pulsed drain current (IDM)164 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
 
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
I
D
D
D
Applications
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See App.
Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Lead-Free
150V
0.045
41A
S
D
G
TO-220AB
IRFB41N15DPbF
S
D
G
TO-220 Full-Pak
IRFB41N15DPbF
S
G
D2 Pak
IRFS41N15DPbF
G
S
D
TO-262 Pak
IRFSL41N15DPbF
G
Gate
Base part number
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
Package Type
TO-220
TO-262
TO-220 Full-Pak
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Parameter
D
Drain
S
Source
Orderable Part Number
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFS41N15DTRLPbF
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
 
°C 
 
 
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Units
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation D2-Pak
Maximum Power Dissipation TO-220
Maximum Power Dissipation TO-220 Full-Pak
Linear Derating FactorTO-220
Linear Derating FactorTO-220 Full-Pak
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300
10 lbf•in (1.1N•m)
Thermal Resistance
 
Symbol
R
JC
R
JC
R
CS
R
JA
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Case, TO-220 Full-Pak
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient,TO-220
Junction-to-Ambient,D2-Pak
Junction-to-Ambient, TO-220 Full-Pak
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
°C/W
1
2017-04-27

IRFIB41N15D Related Products

IRFIB41N15D IRFB41N15D
Description HEXFET Power MOSFET HEXFET Power MOSFET
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 470 mJ 470 mJ
Shell connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V 150 V
Maximum drain current (Abs) (ID) 41 A 41 A
Maximum drain current (ID) 41 A 41 A
Maximum drain-source on-resistance 0.045 Ω 0.045 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 48 W 200 W
Maximum pulsed drain current (IDM) 164 A 164 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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