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IRFP3703

Description
Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A)
CategoryDiscrete semiconductor    The transistor   
File Size214KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFP3703 Overview

Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A)

IRFP3703 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-247AC
package instructionTO-247AC, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1700 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)210 A
Maximum drain current (ID)210 A
Maximum drain-source on-resistance0.0039 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)1000 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
SMPS MOSFET
PD - 95481
IRFP3703PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous Rectification
l
Active ORing
l
Lead-Free
Benefits
l
Ultra Low On-Resistance
l
Low Gate Impedance to Reduce Switching
Losses
l
Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
ƒ
Junction and Storage Temperature Range
V
DSS
30V
R
DS(on)
max
0.0028Ω
I
D
210A
†
Max.
210
†
100
†
1000
230
3.8
1.5
± 20
5.0
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.65
–––
40
Units
°C/W
Typical SMPS Topologies
l
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Offline High Power AC/DC Convertors using Synchronous Rectification
1
7/16/04
Notes

through
†
are on page 8
www.irf.com
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