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IRFW644B

Description
250V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size684KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

IRFW644B Overview

250V N-Channel MOSFET

IRFW644B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionD2PAK-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)480 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.28 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)139 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Features
14A, 250V, R
DS(on)
= 0.28Ω @V
GS
= 10 V
Low gate charge ( typical 47 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
G
!
G
S
D
2
-PAK
IRFW Series
G D S
I
2
-PAK
IRFI Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRFW644B / IRFI644B
250
14
8.9
56
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
480
14
13.9
5.5
3.13
139
1.11
-55 to +150
300
T
J
, T
stg
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
0.9
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

IRFW644B Related Products

IRFW644B IRFI644 IRFI644B
Description 250V N-Channel MOSFET 250V N-Channel MOSFET 250V N-Channel MOSFET
Is it Rohs certified? incompatible - incompatible
Maker Fairchild - Fairchild
package instruction D2PAK-3 - IN-LINE, R-PSIP-T3
Contacts 3 - 3
Reach Compliance Code compliant - compliant
ECCN code EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 480 mJ - 480 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V - 250 V
Maximum drain current (Abs) (ID) 14 A - 14 A
Maximum drain current (ID) 14 A - 14 A
Maximum drain-source on-resistance 0.28 Ω - 0.28 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 - R-PSIP-T3
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 2 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - IN-LINE
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 139 W - 139 W
Maximum pulsed drain current (IDM) 56 A - 56 A
Certification status Not Qualified - Not Qualified
surface mount YES - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form GULL WING - THROUGH-HOLE
Terminal location SINGLE - SINGLE
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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