PD- 94151A
IRG4BC15MD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
Rugged: 10µsec short circuit capable at VGS = 15V
•
Low VCE(on) for 4 to 10kHz applications
•
IGBT co-packaged with ultra-soft-recovery anti-parallel
diodes
C
Short Circuit Rated
Fast IGBT
V
CES
= 600V
•
Industry standard TO-220AB package
G
E
V
CE(on) typ.
= 1.88V
@V
GE
= 15V, I
C
= 8.6A
Benefits
•
Best Value for Appliance and Industrial applications
•
Offers highest efficiency and short circuit capability for
intermediate applications
•
Provides best efficiency for the mid range frequency
(4 to 10kHz)
•
Optimized for Appliance and Industrial applications up to
1HP
•
High noise immune "Positive Only" gate drive - Negative
bias gate drive not necessary
•
For Low EMI designs - requires little or no snubbing
•
Single Package switch for bridge circuit applications
•
Compatible with high voltage Gate Drive IC's
•
Allows simpler gate drive
n-ch an nel
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
t
sc
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
14
8.6
28
28
4.0
12
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.7
7.0
–––
80
–––
Units
°C/W
g (oz)
www.irf.com
1
5/25/01
IRG4BC15MD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage –––
V
CE(on)
Collector-to-Emitter Saturation Voltage –––
–––
–––
V
GE(th)
Gate Threshold Voltage
4.0
∆
V
GE(th)
/
∆
T
J
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
2.3
g
fe
I
CES
Zero Gate Voltage Collector Current
–––
–––
V
FM
Diode Forward Voltage Drop
–––
–––
I
GES
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.65
1.88
2.6
2.1
–––
-10
3.4
–––
–––
1.5
1.4
–––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 250µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA
2.3
I
C
= 8.6A
V
GE
= 15V
–––
V
I
C
= 14A
–––
I
C
= 8.6A, T
J
= 150°C
6.5
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 250µA
–––
S
V
CE
= 100V, I
C
= 6.5A
250
µA
V
GE
= 0V, V
CE
= 600V
1400
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.8
V
I
C
= 4.0A
1.7
I
C
= 4.0A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
46
4.2
15
21
38
540
350
0.32
1.93
2.25
20
42
650
590
3.0
7.5
340
35
8.8
28
38
2.9
3.7
40
70
280
240
Max. Units
Conditions
–––
I
C
= 8.6A
–––
nC V
CC
= 400V
–––
V
GE
= 15V
–––
T
J
= 25°C
–––
ns
I
C
= 8.6A, V
CC
= 480V
810
V
GE
= 15V, R
G
= 75Ω
530
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ
3.6
–––
T
J
= 150°C,
–––
ns
I
C
= 8.6A, V
CC
= 480V
–––
V
GE
= 15V, R
G
= 75Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH Measured 5mm from package
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
–––
ƒ = 1.0MHz
42
ns
T
J
= 25°C
57
T
J
= 125°C
I
F
= 4.0A
5.2
A
T
J
= 25°C
6.7
T
J
= 125°C
V
R
= 200V
60
nC
T
J
= 25°C
110
T
J
= 125°C
di/dt 200A/µs
––– A/µs T
J
= 25°C
–––
T
J
= 125°C
IRG4BC15MD
10
8
Load Current ( A )
6
60% of rated
voltage
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W
4
2
Ideal diodes
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
10
10
T
J
= 150
°
C
T
J
= 150
°
C
1
1
T
J
= 25
°
C
V
GE
= 15V
20µs PULSE WIDTH
1
10
T
J
= 25
°
C
V
CC
= 50V
5µs PULSE WIDTH
10.0
15.0
20.0
0.1
0.1
0.1
5.0
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRG4BC15MD
15
4.0
VGE = 15V
80µs PULSE WIDTH
Maximum DC Collector Current(A)
12
VCE , Collector-to Emitter Voltage (V)
IC = 17A
3.0
9
IC = 9.0A
2.0
6
3
IC = 4.3A
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140
T
C
, Case Temperature (
°
C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC15MD
500
400
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 9.0A
16
C, Capacitance (pF)
C
ies
300
12
200
8
100
C
oes
C
res
1
10
4
0
0
0
10
20
30
40
50
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.30
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 8.6A
2.20
100
RG = 75Ω
VGE = 15V
VCC = 480V
IC = 17A
10
IC = 9.0A
IC = 4.3A
1
Total Switching Losses (mJ)
2.10
2.00
0
10
20
30
40
50
60
70
80
Total Switching Losses (mJ)
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R G, Gate Resistance (
Ω
)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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