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IRHLF630Z4

Description
RADIATION HARDENED LOGIC LEVEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size147KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHLF630Z4 Overview

RADIATION HARDENED LOGIC LEVEL POWER MOSFET

IRHLF630Z4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-39
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance0.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94695
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLF670Z4 100K Rads (Si)
0.5Ω
IRHLF630Z4 300K Rads (Si)
0.5Ω
IRHLF640Z4
IRHLF680Z4
600K Rads (Si)
1000K Rads (Si)
0.5Ω
0.5Ω
I
D
1.6A*
1.6A*
1.6A*
1.6A*
IRHLF670Z4
60V, N-CHANNEL
TECHNOLOGY
T0-39
International Rectifier’s R6
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLF6970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
Continuous Drain Current
1.6*
1.0*
6.4
5.0
0.04
±10
9.0
1.6
0.5
3.5
-55 to 150
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
For footnotes refer to the last page
www.irf.com
1
07/07/03

IRHLF630Z4 Related Products

IRHLF630Z4 IRHLF670Z4 IRHLF640Z4 IRHLF680Z4
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET RADIATION HARDENED LOGIC LEVEL POWER MOSFET RADIATION HARDENED LOGIC LEVEL POWER MOSFET RADIATION HARDENED LOGIC LEVEL POWER MOSFET
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Parts packaging code TO-39 TO-39 TO-39 TO-39
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3 3 3
Reach Compliance Code compli compli compli compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V
Maximum drain current (ID) 1.6 A 1.6 A 1.6 A 1.6 A
Maximum drain-source on-resistance 0.5 Ω 0.5 Ω 0.5 Ω 0.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-39 TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon )
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