PD - 91795A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
Product Summary
Part Number
IRHNB7160
IRHNB3160
IRHNB4160
IRHNB8160
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.040Ω
0.040Ω
0.040Ω
0.040Ω
I
D
51A
51A
51A
51A
IRHNB7160
100V, N-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
™
®
SMD-3
International Rectifier’s RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
51
32.5
204
300
2.4
±20
500
51
30
7.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5 sec)
3.5 (Typical )
g
For footnotes refer to the last page
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1
12/10/01
IRHNB7160
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
5300
1600
350
—
—
0.040
0.045
4.0
—
25
250
100
-100
310
53
110
35
150
150
200
—
—
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =32.5A
➃
VGS = 12V, ID =51A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 32.5A
➃
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =51A
VDS = 50V
VDD = 50V, ID =51A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
Coss
Crss
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
nC
ns
nH
pF
Measured from the center of drain
pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
51
204
1.8
520
6.5
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 51A, VGS = 0V
➃
Tj = 25°C, IF = 51A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
Test Conditions
0.42
°C/W
—
""""Soldered
to a 1 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNB7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source"
➃
On-State Resistance (TO-3)
Static Drain-to-Source"
➃
On-State Resistance (SMD-3)
Diode Forward Voltage"
➃
100 K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
V
GS
= 12V, I
D
=32.5A
V
GS
= 12V, I
D
=32.5A
V
GS
= 0V, IS = 51A
Min
100
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
0.040
0.040
1.8
Min
100
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.057
0.057
1.8
1. Part number IRHNB7160
2. Part numbers IRHNB3160, IRHNB4160 and IRHNB8160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LE T
MeV/(mg/cm²))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
@VGS=0V
Cu
Br
43
39
100
100
100
90
VDS(V)
@VGS=-5V @VGS=-10V @VGS=-15V
100
70
80
50
@VGS=-20V
60
—
120
100
80
VDS
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNB7160
Pre-Irradiation
1000
100
10
5.0V
1
0.1
20 s PULSE WIDTH
T
J
= 25 C
1
10
100
10
1
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
10
20 s PULSE WIDTH
T
J
= 150 C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 51A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25 C
T
J
= 150 C
100
2.0
1.5
10
1.0
0.5
1
5
6
7
8
V DS = 50V
20 s PULSE WIDTH
9
10
11
12
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNB7160
10000
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= 51A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
Crss
0
1
10
100
0
0
40
80
120
FOR TEST CIRCUIT
SEE FIGURE 13
160
200
240
280
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
100
100us
T
J
= 150 C
10
1ms
10
10ms
T
J
= 25 C
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
0.0
1
1
T
C
= 25 C
T
J
= 150 C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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