SOT323 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 1 – NOVEMBER 1998
FEATURES
*
Fast switching
PARTMARKING DETAIL
COMPLEMENTARY TYPE
– T16
– ZUMT2907A
ZUMT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
10
10
10
10
0.3
1.0
0.6
35
50
75
35
100
50
40
1.2
2.0
nA
µA
nA
nA
V
V
V
V
VALUE
75
40
6
600
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
MIN.
75
40
6
CONDITIONS.
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=60V, I
E
=0, T
amb
=150°C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55°C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
ZUMT2222A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Transition
Frequency
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
SYMBOL
f
T
C
obo
C
ibo
t
d
t
r
t
s
t
f
MIN.
300
MAX.
UNIT
MHz
pF
pF
ns
ns
ns
ns
CONDITIONS.
I
C
=20mA, V
CE
=20V
f=100MHz
V
CB
=10V, I
E
=0, f=140KHz
V
EB
=0.5V, I
C
=0 f=140KHz
V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test Circuit)
8
25
10
25
225
60
DELAY AND RISE – TEST CIRCUIT
+30V
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
619Ω
9.9V
200Ω
0
0.5V
Scope:
R
in
> 100 kΩ
C
in
< 12 pF
Rise Time < 5 ns
STORAGE TIME AND FALL TIME – TEST CIRCUIT
+30V
=100µs
<5ns
+16.2 V
Ω
0
1KΩ
1N916
-13.8 V
-3V
Scope:
R
in
> 100 kΩ
C
in
< 12 pF
Rise Time < 5 ns
=500µs
Duty cycle = 2%
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