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IRL3714L

Description
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
CategoryDiscrete semiconductor    The transistor   
File Size127KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRL3714L Overview

Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)

IRL3714L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)72 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)36 A
Maximum drain current (ID)36 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)36 W
Maximum pulsed drain current (IDM)140 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94175A
SMPS MOSFET
IRL3714
IRL3714S
IRL3714L
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
V
DSS
20V
R
DS(on)
max
20mΩ
I
D
36A
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714
D
2
Pak
IRL3714S
TO-262
IRL3714L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
P
D
@T
C
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
36
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
= 25°C
= 70°C
= 25°C
= 70°C
T
J
, T
STG
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
„
Junction-to-Ambient
„
Junction-to-Ambient (PCB mount)
…
Typ.
–––
0.50
–––
–––
Max.
3.2
–––
62
40
Units
°C/W
Notes

through
†
are on page 11
www.irf.com
1
06/19/01

IRL3714L Related Products

IRL3714L IRL3714 IRL3714S
Description Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 72 mJ 72 mJ 72 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (ID) 36 A 36 A 36 A
Maximum drain-source on-resistance 0.02 Ω 0.02 Ω 0.02 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSFM-T3 R-PSSO-G2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 140 A 140 A 140 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Parts packaging code TO-262AA TO-220AB -
Maximum drain current (Abs) (ID) 36 A 36 A -
JEDEC-95 code TO-262AA TO-220AB -
Maximum operating temperature 175 °C 175 °C -
Maximum power dissipation(Abs) 36 W 36 W -
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