20V P-Channel Power MOSFET
General Description
The AAT8303 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech™'s proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
AAT8303
Features
•
•
•
V
DS(MAX)
= -20V
I
D(MAX)
1
= -10A @ 25°C
Low R
DS(ON)
:
• 14 mΩ @ V
GS
= -4.5V
• 24 mΩ @ V
GS
= -2.5V
TSOPJW-8 Package
Applications
•
•
•
•
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Load Switches
D
8
Preliminary Information
Top View
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
-20
±12
±10
±8
±48
-2.3
2.3
1.5
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Junction-to-Ambient steady state
1
Junction-to-Ambient t<5 seconds
1
Junction-to-Foot
1
Typ
86
44
27
Max
105
54
32
Units
°C/W
°C/W
°C/W
8303.2003.09.0.62
1
20V P-Channel Power MOSFET
Electrical Characteristics
Symbol Description
(T
J
=25°C unless otherwise noted)
Conditions
Min
-20
11
18
-48
-0.6
±100
-1
-5
31
36
5
13
10
72
78
108
-1.1
-2.3
14
24
AAT8303
Typ
Max
Units
V
mΩ
A
V
nA
µA
S
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250µA
V
GS
=-4.5V, I
D
=-10A
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-2.5V, I
D
=-7.6A
2
I
D(ON)
On-State Drain Current
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250µA
I
GSS
Gate-Body Leakage Current
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=-20V
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-16V, T
J
=70°C
3
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-10A
3
Dynamic Characteristics
Q
G
Total Gate Charge
V
DS
=-10V, R
D
=1.0Ω, V
GS
=-4.5V
Q
GS
Gate-Source Charge
V
DS
=-10V, R
D
=1.0Ω, V
GS
=-4.5V
Q
GD
Gate-Drain Charge
V
DS
=-10V, R
D
=1.0Ω, V
GS
=-4.5V
t
D(ON)
Turn-ON Delay
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0Ω,
t
R
Turn-ON Rise Time
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0Ω,
t
D(OFF)
Turn-OFF Delay
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0Ω,
t
F
Turn-OFF Fall Time
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0Ω,
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-10A
1
I
S
Continuous Diode Current
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design, howev-
er R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
8303.2003.09.0.62
20V P-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Output Characteristics
48
40
32
AAT8303
Transfer Characteristics
48
40
5V
4.5V
3V
4V
3.5V
2.5V
V
D
=V
G
32
I
DS
(A)
I
D
(A)
24
24
16
8
2V
16
8
0
0
0 .5
1
1 .5
2
2 .5
3
25°C
-55°C
0
1
1.5V
125°C
2
3
4
0
V
DS
(V)
V
GS
(V)
On-Resistance vs. Drain Current
0.04
0.06
On-Resistance vs. Gate to Source Voltage
I
D
= 10A
0.032
R
DS(ON)
(Ω)
0.024
V
GS
= 2.5V
0.016
R
DS(ON)
(Ω)
0.04
0.02
0.008
V
GS
= 4.5V
0
0
8
16
24
32
40
48
0
1
2
3
4
5
0
I
D
(A)
V
GS
(V)
On-Resistance vs. Junction Temperature
1.6
1.5
Threshold Voltage
0.5
Normalized R
DS(ON)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
GS(th)
Variance (V)
V
GS
= 4.5V
I
D
= 10A
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
I
D
= 250µA
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
(°C)
T
J
(°C)
8303.2003.09.0.62
3
20V P-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Gate Charge
5
4
3
AAT8303
Source-Drain Diode Forward Voltage
100
V
D
=10V
I
D
=10A
10
V
GS
(V)
I
S
(A)
2
1
0
0
5
10
15
20
25
30
35
40
T
J
= 150°C
1
T
J
= 25°C
0.1
0
0 .2
0.4
0 .6
0.8
1
1.2
Q
G
, Charge (nC)
V
SD
(V)
Capacitance
5000
4000
3000
2000
1000
Single Pulse Power, Junction to Ambient
50
45
40
Capacitance (pF)
Power (W)
C
iss
35
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
100
1000
C
oss
C
rss
0
0
5
10
15
20
V
DS
(V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective
Transient Thermal Impedance
10
1
.5
.2
.1
.02
0.1
.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
4
8303.2003.09.0.62
20V P-Channel Power MOSFET
Ordering Information
Package
TSOPJW-8
Marking
1
JXXYY
Part Number (Tape and Reel)
AAT8303ITS-T1
AAT8303
Note 1: XYY = assembly and date code.
Package Information
TSOPJW-8
0.325
±
0.075
2.40
±
0.10
0.65 BSC 0.65 BSC 0.65 BSC
2.85
±
0.20
7°
3.025
±
0.075
0.9625
±
0.0375
1.0175
±
0.0925
0.04 REF
0.055
±
0.045
0.010
0.15
±
0.05
0.45
±
0.15
2.75
±
0.25
All dimensions in millimeters.
8303.2003.09.0.62
5
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