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AP1045A

Description
2.4~2.5 GHz High Power Amplifier
File Size283KB,6 Pages
ManufacturerETC
Download Datasheet View All

AP1045A Overview

2.4~2.5 GHz High Power Amplifier

AP1045A
2.4~2.5 GHz High Power Amplifier
2004.12.20
AP1045A is a linear, two-stages power amplifier
MMIC with high output power in 2.4GHz band utilizing
InGaP/GaAs HBT process. With the excellent linearity
performance, the device delivers 20dBm output
power under 54Mbps OFDM (IEEE802.11g)
modulation, with 3% EVM at 3.3V. It can also deliver
22.5dBm 11g linear power at 5V. The PA also
includes on-chip power detector, providing a DC
voltage proportional to the output power of device.
The AP1045A is housed in a 3 x 3(mm), 16 pin, QFN
leadless package.
High Power:
20dBm 11g linear power at 3.3V
22.5dBm 11g linear power at 5V
High Gain:
30.5dB Gain at 3.3V, Pout=20dBm
Detector
Major Applications
• IEEE 802.11b/g
• Wireless LAN Systems
• 2.4 GHz ISM Band Application
• Suitable for high power WLAN applications
Pin Details
Pin Number
1
2
3
4
Name
RF_IN
GND
Bias_Vcc
Dect_Out
Vb1
Vb2
GND
NC
NC
RF_OUT
RF_OUT
RF_OUT
Vcc
Vcc
NC
NC
GND
Description
RF input
Ground
Bias Ckt Voltage
Detector Output
First stage Bias
Second stage Bias
Ground
No contact
No contact
RF output
RF output
RF output
Power supply input
Power supply input
No contact
No contact
Ground
Functional Block Diagram
NC
NC
Vcc
Vcc
5
6
16
RF_IN
15
14
13
12
11
10
RF_OUT
7
8
9
10
11
RF_OUT
1
2
3
Bias
GND
RF_OUT
Bias_Vcc
12
13
AP1045A
Dect_Out
4
5
Vb1
9
6
Vb2
NC
14
15
16
Pkg Base
7
GND
8
NC
QFN-16pin, 3x3 (mm)
For more information,please contact us at:
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
© 2003 RF Integrated Corporation. All rights reserved.
RF integrated Corp. reserved the right to make any changes to the specifications without notice.
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