June 2004
AOD444, AOD444L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD444 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
AOD444L (Green Product) is offered in a lead-free
package.
Features
V
DS
(V) = 60V
I
D
= 12 A
R
DS(ON)
< 60 mΩ (V
GS
= 10V)
R
DS(ON)
< 85 mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
60
±20
12
12
30
12
23
20
10
2
1.3
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17.4
50
4
Max
30
60
7.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=10mA, V
GS
=0V
V
DS
=48V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=12A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
Forward Transconductance
V
DS
=5V, I
D
=12A
I
S
=1A, V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
T
J
=125°C
1
30
47
85
67
14
0.74
1
12
450
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
61
27
1.35
7.5
V
GS
=10V, V
DS
=30V, I
D
=12A
3.8
1.2
1.9
4.2
V
GS
=10V, V
DS
=30V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=12A, dI/dt=100A/µs
3.4
16
2
27.6
30
35
2
10
5
540
85
60
2.4
Min
60
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=4.5V,6A
V
GS
=10V, 12A
7V
5V
I
D
(A)
4.5V
V
GS
=4V
3.5V
5
10
125°C
25°C
10V
6V
20
V
DS
=5V
15
0
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
70
R
DS(ON)
(mΩ)
V
GS
=4.5V
60
V
GS
=10V
50
40
0
4
8
12
16
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
R
DS(ON)
(mΩ)
120
125°C
100
80
60
I
S
(A)
I
D
=12A
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
40
4
6
8
10
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
100
0
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
V
DS
=30V
I
D
=12A
A
700
600
Capacitance (pF)
500
400
300
C
oss
200
C
iss
T
J(Max)
=175°C, T
A
=25°C
10µs
R
DS(ON)
limited
1ms
10ms
200
160
Power (W)
120
80
40
0
0.0001
T
J(Max)
=175°C
T
A
=25°C
10.0
I
D
(Amps)
100µs
1.0
DC
0.1
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=7.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
I
D
(A), Peak Avalanche Current
Power Dissipation (W)
0.001
12
10
8
6
4
2
0
0.00001
T
A
=25°C
25
t
A
=
L
⋅
I
D
BV
−
V
DD
20
15
10
5
0
0.0001
0
25
50
75
100
125
150
175
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
14
12
Current rating I
D
(A)
10
Power (W)
8
6
4
50
40
30
20
10
T
A
=25°C
2
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
T
100
1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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