DISCRETE SEMICONDUCTORS
DATA SHEET
M3D438
BLA1011-2
Avionics LDMOS transistor
Product specification
Supersedes data of 2002 Oct 02
2003 Nov 19
Philips Semiconductors
Product specification
Avionics LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
•
Avionics applications in the 1030 to 1090 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
2
Top view
BLA1011-2
PINNING - SOT538A
PIN
1
2
3
drain
gate
source, connected to mounting base
DESCRIPTION
1
3
MBK905
Fig.1 Simplified outline (SOT538A).
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF OPERATION
Pulsed class-AB;
t
p
= 50
µs; δ
= 2%
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BLA1011-2
−
DESCRIPTION
ceramic surface mounted package; 2 leads
VERSION
SOT538A
f
(MHz)
1030 to 1090
V
DS
(V)
36
P
L
(W)
2
G
p
(dB)
>16
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
h
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
75
±15
2.2
10
+150
200
V
V
A
W
°C
°C
UNIT
2003 Nov 19
2
Philips Semiconductors
Product specification
Avionics LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
Z
th(j-mb)
R
th(mb-h)
Notes
PARAMETER
thermal impedance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
note 1
note 2
BLA1011-2
VALUE
1
6.5
UNIT
K/W
K/W
1. Thermal impedance is determined under RF operating conditions with pulsed bias and T
h
= 25
°C.
2. Typical value for mounting on PCB with 32 0.4 mm thermal vias with 20
µm
tin plating and thermal compound
between PCB and heatsink.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 0.2 mA
V
DS
= 10 V; I
D
= 20 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 0.75 A
V
GS
= 10 V; I
D
= 0.75 A
V
GS
= 0 V; V
DS
= 26 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 26 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 26 V; f = 1 MHz
MIN.
75
2
−
2.8
−
−
−
−
−
−
TYP.
−
−
−
−
−
0.5
1.2
11
9
0.5
MAX.
−
5
0.1
−
40
−
−
−
−
−
UNIT
V
V
mA
A
nA
S
Ω
pF
pF
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th mb-h
= 6.5 K/W unless otherwise specified.
MODE OF
OPERATION
Pulsed class-AB;
t
p
= 50
µs; δ
= 2%
f
(MHz)
1030 to 1090
V
DS
(V)
36
I
DQ
(mA)
50
P
L
(W)
2
G
p
(dB)
>16
t
r
(ns)
<15
t
f
(ns)
<15
PULSE DROOP
(dB)
<0.5
Ruggedness in class-AB operation
The BLA1011-2 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
operating conditions.
Typical impedance values
FREQUENCY
(MHz)
1030
1060
1090
Z
S
(Ω)
1.51 + j 11.76
1.51 + j 11.26
1.52 + j 10.77
Z
L
(Ω)
6.9 + j 5
6.7 + j 5.9
5.1 + j 6.6
2003 Nov 19
3
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-2
handbook, halfpage
3
MGU484
PL
(W)
2
(1)
(2)
(3)
20
handbook, halfpage
Gp
(dB)
16
MGU483
(1)
(2)
(3)
12
8
1
4
0
0
10
20
30
40
50
PD (mW)
0
0
1
2
PL (W)
3
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
t
p
= 50
µs; δ
= 2%.
(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
t
p
= 50
µs; δ
= 2%.
(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
Fig.2
Load power as a function of drive power;
typical values.
Fig.3
Power gain as a function of load power;
typical values.
handbook, halfpage
20
Gp
(dB)
MGU485
16
(1)
(2)
(3)
(4)
handbook, halfpage
2.5
PL
(W)
MGU486
2
12
1.5
8
1
4
0.5
0
1000
0
1040
1080
f (MHz)
1120
0
1
2
3
4
VGS (V)
5
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
t
p
= 50
µs; δ
= 2%.
(1) P
L
= 1 W.
(2) P
L
= 2 W.
(3) P
L
= 3 W.
(4) P
L
= 4 W.
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
f = 1090 MHz; t
p
= 50
µs; δ
= 2%.
Fig.4
Power gain as a function of frequency;
typical values.
Fig.5
Load power as a function of gate-source
voltage; typical values.
2003 Nov 19
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-2
handbook, full pagewidth
110
C11
C4
C5
C3
R2
C10
60
C1
C2
R1
C6
7
13.5
41
C7
C8
C9
5
7.5
MGU487
Dimensions in mm.
The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm;
ε
r
= 6.2), the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
Fig.6 Printed-circuit board for class-AB test circuit.
List of components for class-AB test circuit
(see Fig.6)
COMPONENT
C1, C8
C2
C3
C4, C10
C5
C6
C7
C9
C11
R1
R2
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 200B or capacitor of same quality.
3. American Technical Ceramics type 100B or capacitor of same quality.
DESCRIPTION
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor; note 3
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 3
tekelec trimmer; type 37283
multilayer ceramic chip capacitor; note 1
SMD resistor
SMD resistor
56 pF
7.5 pF
1.8 pF
20 nF
33 pF
5.6 pF
6.2 pF
0.4 to 2.5 pF
33 pF
2.2
Ω
(2 in parallel)
22
Ω
VALUE
2003 Nov 19
5
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