〈SMALL-SIGNAL TRANSISTOR〉
2SA1530
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
2SA1530 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
2.8
1.90
0.95 0.95
①
②
③
0.4
0½0.1
OUTLINE DRAWING
2.8
0.65
1.5
0.65
Unit:½½
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max(@ I
C
=-30mA ,I
B
=-1.5mA)
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
1.1
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
TERMINAL ONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
JEITA:SC-59
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-50
-50
-6
-100
200
+150
-55½+150
Unit
V
V
V
mA
mW
℃
℃
Type Name
hFE Item
MARKING
P
C
T
j
T
stg
T Q
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
Test conditions
I
C
= -100μA , R
BE
= ∞
V
V
V
V
CB
EB
Limits
Min
-50
-
-
120
70
-
-
-
Item
hFE
Q
120½270
Typ
-
-
-
(※)
-
-
200
2.5
R
180½390
Max
-
-0.5
-0.5
560
-
-0.3
-
-
0.13
0.8
Unit
V
μA
μA
= -50V , I
E
= 0mA
= -6V , I
C
= -1mA
= -6V , I
C
= -0.1mA
= -4V , I
C
= 0mA
CE
CE
I
C
= -30mA , I
B
= -1.5mA
V
V
CE
V
MHz
pF
S
270½560
= -6V , I
E
= 10mA
= -6V , I
E
= 0mA,f=1MHz
CB
.※: It shows hFE classification at right table.
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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May
.2011