Back
Opto–Switch
Transmissive
Phototransistor output.
5.4-mm-tall low profile model.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
2.8mm slot width.
Off–centre location pip for correct orientation.
EE–SX1025
Dimensions
0.2 max.
0.2 max.
Internal Circuit
K
C
Four, 5°
White band
Optical
axis
A
0.5±0.05
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
5.4±0.2
2.2±0.4
Four, 0.5 Four, 0.25
Cross section AA
3 mm max.
3
t
mm
v
6
6
t
mm
v
10
10
t
mm
v
18
18
t
mm
v
30
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Forward current
Pulse forward current
Reverse voltage
Detector
Collector–Emitter voltage
Emitter–Collector voltage
Collector current
Collector dissipation
Ambient temperature
Operating
Storage
Soldering
Note:
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Symbol
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
---
20 mA
100 mW (see note 1)
–25°C to 85°C
–30°C to 100°C
260°C
1.Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2.The pulse width is 10
µs
maximum with a frequency of 100 Hz.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
Symbol
V
F
Value
1.2 V typ., 1.5 V max.
0.01
µA
typ., 10
µA
max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4
µs
typ.
4
µs
typ.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0 x
---
I
F
= 20 mA, I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 5 mA
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 5 mA
Condition
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Collector dissipation Pc (mW)
I
F
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
V
CE
= 10 V
Forward current I
F
(mA)
Forward current I
F
(mA)
Ta = –30°C
Ta = 25°C
Ta = 70°C
P
C
Ambient temperature Ta (°C)
Forward voltage V
F
(V)
Light current I
L
(mA)
Forward current I
F
(mA)
Light Current vs. Collector–Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
I
F
= 20 mA
V
CE
= 5 V
Dark Current vs. Ambient Tem-
perature Characteristics (Typical)
V
CE
= 10 V
0 x
Relative light current I
L
(%)
Light current I
L
(mA)
I
F
= 50 mA
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10
mA
Dark current I
D
(nA)
Collector–Emitter voltage V
CE
(V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Vcc = 5 V
Ta = 25°C
Sensing Position Characteristics
(Typical)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25°C
(Center of
optical axis)
Response Time Measurement
Circuit
Input
90 %
10 %
Response time tr, tf (
µ
s)
Output
Input
Output
Load resistance R
L
(kΩ)
Distance d (mm)
Talking
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