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FSPS234R4

Description
Power Field-Effect Transistor, 11A I(D), 250V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
CategoryDiscrete semiconductor    The transistor   
File Size105KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FSPS234R4 Overview

Power Field-Effect Transistor, 11A I(D), 250V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

FSPS234R4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)22 W
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FSPS234R, FSPS234F
Data Sheet
July 2001
File Number
4877
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
itle
PS
R,
PS2
)
b-
di-
n
d-
d,
GR
is-
Cha
l
wer
S-
Ts)
tho
y-
ds
di-
n
d-
d,
GR
is-
Cha
l
wer
S-
Ts,
r-
po-
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Fairchild FS families
have always featured.
TM
Features
• 11A, 250V, r
DS(ON)
= 0.220Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 4.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37.
Star*Power Gold FETs have been optimized for SEE and
Gate Charge providing SEE performance to 80% of the
rated voltage for an LET of 82 with extremely low gate
charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45216W.
Symbol
D
G
S
Packaging
TO-257AA
S
D
G
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL
Engineering Samples
TXV
Space
TXV
Space
PART NUMBER/BRAND
FSPS234D1
FSPS234R3
FSPS234R4
FSPS234F3
FSPS234F4
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
1
FSPS234R, FSPS234F Rev. A2
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