PD - 93751D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57Z30 100K Rads (Si) 0.020Ω
IRHNJ53Z30 300K Rads (Si) 0.020Ω
IRHNJ54Z30
500K Rads (Si)
0.020Ω
IRHNJ58Z30 1000K Rads (Si) 0.025Ω
TM
IRHNJ57Z30
JANSR2N7479U3
30V, N-CHANNEL
REF: MIL-PRF-19500/703
5
TECHNOLOGY
I
D
QPL Part Number
22A* JANSR2N7479U3
22A* JANSF2N7479U3
22A* JANSG2N7479U3
22A* JANSH2N7479U3
SMD-0.5
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
300 (for 5s)
1.0 (Typical)
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
04/25/06
IRHNJ57Z30, JANSR2N7479U3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
—
2.0
16
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.028
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.02
4.0
—
10
25
100
-100
65
20
10
25
100
35
30
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, I D = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 22A
Ã
VDS = VGS, ID = 1.0mA
VDS
≥
15V, IDS = 22A
Ã
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, I D = 22A
VDS = 15V
VDD = 15V, ID = 22A,
VGS =12V, RG =
7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2054
936
33
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
102
193
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Ã
Tj = 25°C, IF = 22A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.9
1.67
—
Units
°C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHNJ57Z30, JANSR2N7479U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
30
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.024
0.02
1.2
30
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.03
0.025
1.2
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 24V, V
GS
=0V
V
GS
= 12V, I
D
=22A
V
GS
= 12V, I
D
=22A
V
GS
= 0V, IS = 22A
1. Part numbers IRHNJ57Z30 (JANSR2N7479U3), IRHNJ53Z30 (JANSF2N7479U3) and IRHNJ54Z30 (JANSG2N7479U3)
2. Part number IRHNJ58Z30 (JANSH2N7479U3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
I
LET
(MeV/(mg/cm
2
))
28
37
60
Energy
(MeV)
261
285
344
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
40
30
30
30
25
15
37
30
30
30
22.5
15
33
25
25
20
15
7.5
35
30
25
20
15
10
5
0
0
-5
-10
VGS
-15
-20
Cu
Br
I
VDS
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ57Z30, JANSR2N7479U3
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
5.0V
10
10
5.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
2.0
I
D
= 22A
I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
5.0
V DS = 15V
25V
15
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHNJ57Z30, JANSR2N7479U3
4000
3200
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 22A
V
DS
= 24V
V
DS
= 15V
V
DS
= 6V
C, Capacitance (pF)
15
Coss
2400
Ciss
1600
10
5
800
Crss
0
1
10
100
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
T
J
= 25
°
C
10
ID, Drain-to-Source Current (A)
100
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
VDS, Drain-to-Source Voltage (V)
1ms
1
0ms
1
0.4
V
GS
= 0 V
0.8
1.2
1.6
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
