PD-90697F
IRH7250
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-3 (TO-204AE)
Product Summary
Part Number
IRH7250
IRH3250
IRH4250
IRH8250
RAD Hard™HEXFET
®
TECHNOLOGY
200V, N-CHANNEL
Radiation Level
100 kRads(Si)
300 kRads(Si)
600 kRads(Si)
1000 kRads(Si)
R
DS(on)
0.11
0.11
0.11
0.11
I
D
26A
26A
26A
26A
TO-3 (TO-204AE)
Description
IR HiRel RADHard™ HEXFET
®
MOSFET technology provides
high performance power MOSFETs for space applications.
This technology has long history of proven performance and
reliability in satellite applications. These devices have been
characterized for both Total Dose and Single Event Effects
(SEE). The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
26
16
104
150
1.2
± 20
500
26
15
5.0
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
11.5 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-07-29
IRH7250
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
200
–––
–––
–––
2.0
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
4700
850
210
–––
–––
0.10
0.11
4.0
–––
25
250
100
-100
170
30
70
33
140
140
140
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 16A
V
GS
= 12V, I
D1
= 26A
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 15V, I
D2
= 16A
V
DS
= 160V, V
GS
= 0V
V
DS
= 160V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D1
= 26A
V
DS
= 100V
V
GS
= 12V
V
DD
= 100V
I
D1
= 26A
R
G
= 2.35
V
GS
= 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package)
ns
nH
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Symbol
R
JC
R
JA
R
CS
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
104
1.4
820
12
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 26A, V
GS
= 0V
T
J
= 25°C, I
F
= 26A, V
DD
≤
50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient (Typical Socket Mount)
Case –to Sink (Typical Socket Mount)
Min.
–––
–––
–––
Typ.
–––
–––
0.12
Max.
0.83
30
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L = 1.48mH, Peak I
L
= 26A, V
GS
= 12V
V
I
SD
26A, di/dt
190A/µs, V
DD
200V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 160 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-07-29
IRH7250
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-204AE)
Diode Forward Voltage
100 kRads (Si)
1
Min.
200
2.0
–––
–––
–––
–––
–––
–––
Up to
300k - 1000 kRads (Si)
2
Units
Min.
Max.
Max.
–––
4.0
100
-100
25
0.100
0.100
1.4
200
1.25
–––
–––
–––
–––
–––
–––
–––
4.5
100
-100
50
0.155
0.155
1.4
V
V
nA
nA
µA
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D2
= 16A
V
GS
= 12V, I
D2
= 16A
V
GS
= 0V, I
S
= 26A
1. Part numbers IRH7250
2. Part numbers IRH3250, IRH4250 and IRH8250
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm
2
))
Cu
Br
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
@ VGS =
0V
190
100
@ VGS =
-5V
180
100
VDS (V)
@ VGS =
-10V
170
100
@ VGS =
-15V
125
50
@ VGS =
-20V
–––
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-07-29
IRH7250
Pre-Irradiation
Fig 1.
Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 2.
Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 3.
Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
Fig 5.
Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure
4
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
2019-07-29
International Rectifier HiRel Products, Inc.
IRH7250
Pre-Irradiation
Fig 7.
Typical Transient Response of Rad Hard HEXFET
During 1x10
12
Rad (Si)/Sec Exposure
Note: Bias Conditions during radiation: V
GS
= 12 Vdc, V
DS
= 0 Vdc, Fig-9,10,11,12
Fig 9.
Typical Output Characteristics
Pre-Irradiation
Fig 10.
Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 11.
Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
5
Fig 12.
Typical Output Characteristics
Post-Irradiation 1 Mega Rads (Si)
2019-07-29
International Rectifier HiRel Products, Inc.
京公网安备 11010802033920号
EEWORLD
