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BAL74E6433

Description
Rectifier Diode, 1 Element, 0.25A, 50V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size69KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAL74E6433 Overview

Rectifier Diode, 1 Element, 0.25A, 50V V(RRM), Silicon

BAL74E6433 Parametric

Parameter NameAttribute value
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.37 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1

BAL74E6433 Related Products

BAL74E6433 BAL74E6327
Description Rectifier Diode, 1 Element, 0.25A, 50V V(RRM), Silicon Rectifier Diode, 1 Element, 0.25A, 50V V(RRM), Silicon
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum output current 0.25 A 0.25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.37 W 0.37 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 50 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Base Number Matches 1 1

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