BAV99/T4 datasheet, PDF - EEWORLD Datasheet

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BAV99/T4: Description0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; File Size145KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BAV99/T4 Overview

0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3

BAV99/T4 Parametric

Parameter Name	Attribute value
Maker	NXP
Parts packaging code	SOT-23
package instruction	R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Maximum non-repetitive peak forward current	4 A
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.215 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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BAV99 series

High-speed switching diodes

Rev. 07 — 14 April 2010

Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

Table 1.

Product overview

Package

NXP

BAV99

BAV99S

BAV99W

SOT23

SOT363

SOT323

JEITA

SC-88

SC-70

JEDEC

TO-236AB

dual series

quadruple; 2 series

dual series

Configuration

Package

configuration

small

very small

Type number

1.2 Features and benefits

High switching speed: t

≤

4 ns

Low leakage current

Small SMD plastic packages

Low capacitance: C

≤

1.5 pF

Reverse voltage: V

≤

100 V

AEC-Q101 qualified

1.3 Applications

High-speed switching

General-purpose switching

Reverse polarity protection

1.4 Quick reference data

Table 2.

Symbol

Per diode

[1]

Quick reference data

Parameter

reverse current

reverse voltage

reverse recovery time

[1]

Conditions

= 80 V

Min

Typ

Max

0.5

100

Unit

μA

When switched from I

= 10 mA to I

= 10 mA; R

= 100

Ω;

measured at I

= 1 mA.

BAV99/T4 Related Products

	BAV99/T4	BAV99-T	BAV99/T3	BAV99W/T4	BAV99W-T	BAV99W/T3	BAV99S/T3
Description	0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3	0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3	0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3	DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3 PIN, Signal Diode	DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3 PIN, Signal Diode	DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3 PIN, Signal Diode	DIODE 0.2 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN, Signal Diode
Parts packaging code	SOT-23	SOT-23	SOT-23	SC-70	SC-70	SC-70	SC-88
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	PLASTIC, SC-88, 6 PIN
Contacts	3	3	3	3	3	3	6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	0.715 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G6
Number of components	2	2	2	2	2	2	4
Number of terminals	3	3	3	3	3	3	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	0.215 A	0.215 A	0.215 A	0.15 A	0.15 A	0.15 A	0.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.25 W	0.25 W	0.25 W	0.2 W	0.2 W	0.2 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Maximum reverse current	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA	0.5 µA
Maximum reverse recovery time	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	NXP	NXP	NXP	NXP	-	NXP	NXP
Maximum non-repetitive peak forward current	4 A	4 A	4 A	4 A	4 A	4 A	-
Base Number Matches	1	1	1	1	1	-	-
Is it Rohs certified?	-	conform to	conform to	-	conform to	conform to	conform to
JESD-609 code	-	e3	e3	-	e3	e3	e3
Peak Reflow Temperature (Celsius)	-	260	260	-	260	260	260
Terminal surface	-	Tin (Sn)	TIN	-	TIN	Tin (Sn)	Matte Tin (Sn)
Maximum time at peak reflow temperature	-	40	40	-	40	40	40

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