ISL9N308AD3 / ISL9N308AD3ST
June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET
®
Trench Power MOSFETs
30V, 50A, 8mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
• Fast switching
• r
DS(ON)
= 0.0064Ω (Typ), V
GS
= 10V
• r
DS(ON)
= 0.010Ω (Typ), V
GS
= 4.5V
• Q
g
(Typ) = 24nC, V
GS
= 5V
• Q
gd
(Typ) = 8nC
• C
ISS
(Typ) = 2600pF
Applications
• DC/DC converters
D
G
G
D
S
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) Note 1
I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) Note 1
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 10V, R
θJC
=
52
o
C/W)
50
48
14
Figure 4
100
0.67
-55 to 175
A
A
A
A
W
W/
o
C
o
Parameter
Ratings
30
±20
Units
V
V
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.5
100
52
o
C/W
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
N308AD
N308AD
Device
ISL9N308AD3ST
ISL9N308AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C
ISL9N308AD3 / ISL9N308AD3ST
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150
o
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA
I
D
= 50A, V
GS
= 10V
I
D
= 48A, V
GS
= 4.5V
1
-
-
-
0.0064
0.010
3
0.008
0.012
V
Ω
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
(V
GS
= 4.5V)
-
-
V
DD
= 15V, I
D
= 14A
V
GS
= 4.5V, R
GS
= 6.2Ω
-
-
-
-
(V
GS
= 10V)
-
-
V
DD
= 15V, I
D
= 14A
V
GS
= 10V, R
GS
= 6.2Ω
-
-
-
-
-
8
40
64
31
-
71
-
-
-
-
142
ns
ns
ns
ns
ns
ns
-
15
67
35
32
-
122
-
-
-
-
100
ns
ns
ns
ns
ns
ns
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V V
DD
= 15V
V
GS
= 0V to 1V I
D
= 48A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
2600
520
225
45
24
2.6
7
8
-
-
-
68
37
4.0
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
I
D
= 3.2A, L = 3.0mH
215
-
-
µs
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 48A
I
SD
= 20A
I
SD
= 48A, dI
SD
/dt = 100A/µs
I
SD
= 48A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
26
14
V
V
ns
nC
Notes:
1:
TO-251AA continuous current limited by package to 35A.
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C
ISL9N308AD3 / ISL9N308AD3ST
Typical Characteristic
1.2
POWER DISSIPATION MULTIPLIER
T
C
= 25°C unless otherwise noted
60
1.0
I
D
, DRAIN CURRENT (A)
50
V
GS
= 10V
40
V
GS
= 4.5V
30
0.8
0.6
0.4
20
0.2
10
0
0
25
50
75
100
125
o
0
150
175
25
50
75
100
125
o
150
175
T
C
, CASE TEMPERATURE ( C)
T
C
, CASE TEMPERATURE ( C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
0.01
10
-5
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
I = I
25
175 - T
C
150
I
DM
, PEAK CURRENT (A)
40
10
-5
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C
ISL9N308AD3 / ISL9N308AD3ST
Typical Characteristic
(Continued) T
C
= 25°C unless otherwise noted
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
75
75
100
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.5V
50
50
T
J
= 175
o
C
25
T
J
= 25
o
C
T
J
=
-55
o
C
25
V
GS
= 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
2.0
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
0
0
0.5
1.0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
25
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
Figure 6. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 32A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
20
1.5
15
I
D
= 14A
10
I
D
= 50A
1.0
V
GS
= 10V, I
D
= 50A
5
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.5
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.4
V
GS
= V
DS
, I
D
= 250µA
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.2
I
D
= 250µA
1.0
1.1
0.8
0.6
1.0
0.4
0.2
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
0.9
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C
ISL9N308AD3 / ISL9N308AD3ST
Typical Characteristic
(Continued) T
C
= 25°C unless otherwise noted
4000
C
ISS
=
C
GS
+ C
GD
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
1000
C
RSS
=
C
GD
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
DD
= 15V
8
6
4
2
V
GS
= 0V, f = 1MHz
100
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
10
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 48A
I
D
= 14A
20
30
Q
g
, GATE CHARGE (nC)
40
50
Figure 11. Capacitance vs Drain to Source
Voltage
250
V
GS
= 4.5V, V
DD
= 15V, I
D
= 14A
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
350
V
GS
= 10V, V
DD
= 15V, I
D
= 14A
300
200
SWITCHING TIME (ns)
SWITCHING TIME (ns)
t
r
150
t
d(OFF)
100
t
f
250
t
d(OFF)
200
150
100
t
r
50
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
0
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
t
d(ON)
50
t
f
t
d(ON)
50
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
0V
R
G
-
BV
DSS
V
DS
V
DD
+
V
DD
I
AS
0.01Ω
0
t
AV
Figure 15. Unclamped Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
Figure 16. Unclamped Energy Waveforms
ISL9N308AD3 / ISL9N308AD3ST Rev C
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