FSYE13A0D, FSYE13A0R
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Fairchild has developed
a series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Fairchild portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Fairchild for any desired deviations
from the data sheet.
Features
• 12A, 100V, r
DS(ON)
= 0.160
Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
SMD.5
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSYE13A0D1
FSYE13A0D3
FSYE13A0R1
FSYE13A0R3
FSYE13A0R4
Formerly available as type TA17696.
©2001 Fairchild Semiconductor Corporation
FSYE13A0D, FSYE13A0R Rev. B
FSYE13A0D, FSYE13A0R
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYE13A0D, FSYE13A0R
100
100
12
8
36
±
20
42
17
0.33
36
12
36
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
Ω
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
µ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
100
-
1.5
0.5
-
-
-
TYP
-
-
-
-
-
-
-
MAX
-
5.0
4.0
-
25
250
100
200
2.32
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 12A
-
-
-
-
-
I
D
= 12A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
0.093
-
-
-
-
-
-
36
-
6.5
20
8
760
310
110
-
0.160
0.246
15
70
35
30
59
40
1.9
7.8
23
-
-
-
-
3.0
UNITS
V
V
V
V
µ
A
µ
A
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±
20V
V
GS
= 12V, I
D
= 12A
I
D
= 8A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 50V, I
D
= 12A,
R
L
=
4.17Ω
, V
GS
= 12V,
R
GS
= 7.5
Ω
©2001 Fairchild Semiconductor Corporation
FSYE13A0D, FSYE13A0R Rev. B
FSYE13A0D, FSYE13A0R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/
µ
s
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 12A
V
GS
= 12V, I
D
= 8A
MIN
100
1.5
-
-
-
-
MAX
-
4.0
100
25
2.32
0.160
UNITS
V
V
nA
µA
V
Ω
TEST CONDITIONS
MIN
0.6
-
TYP
-
-
MAX
1.8
300
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
100
100
80
50
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
120
100
80
V
DS
(V)
60
40
20
TEMP = 25
o
C
0
0
-5
-10
V
GS
(V)
-15
-20
-25
LIMITING INDUCTANCE (HENRY)
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
1E-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
©2001 Fairchild Semiconductor Corporation
FSYE13A0D, FSYE13A0R Rev. B
FSYE13A0D, FSYE13A0R
Typical Performance Curves
16
14
12
I
D
, DRAIN (A)
10
8
6
4
2
0
-50
0.1
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
1
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
(Continued)
100
T
C
= 25
o
C
10
100µs
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
300
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 8A
2.0
NORMALIZED r
DS(ON)
12V
Q
G
1.5
Q
GS
V
G
Q
GD
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
10
NORMALIZED
THERMAL RESPONSE (Z
θJC
)
1
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
t
1
t
2
10
1
0.1
P
DM
0.001
10
-5
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
©2001 Fairchild Semiconductor Corporation
FSYE13A0D, FSYE13A0R Rev. B
FSYE13A0D, FSYE13A0R
Typical Performance Curves
50
I
AS
, AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
1
0.01
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
50Ω
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
V
DD
t
ON
t
d(ON)
t
OFF
t
d(OFF)
t
r
t
f
90%
R
L
V
DS
V
GS
= 12V
DUT
0V
R
GS
V
DS
90%
10%
10%
90%
V
GS
10%
50%
PULSE WIDTH
50%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSYE13A0D, FSYE13A0R Rev. B
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