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ITA10B3

Description
TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size65KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

ITA10B3 Overview

TVS DIODE

ITA10B3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSOD
package instructionR-PDSO-G20
Contacts20
Reach Compliance Codecompli
ECCN codeEAR99
Minimum breakdown voltage10 V
Maximum clamping voltage17 V
ConfigurationCOMMON CATHODE, 10 ELEMENTS
Minimum diode capacitance800 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G20
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation300 W
Number of components10
Number of terminals20
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8 V
Maximum reverse current4 µA
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
®
ITA6V5B3 / ITA10B3
ITA18B3 / ITA25B3
BIDIRECTIONAL TRANSIL
TM
ARRAY
FOR DATALINE PROTECTION
Application Specific Discretes
A.S.D.
TM
APPLICATIONS
Differential data transmission lines protection :
- RS-232
- RS-423
- RS-422
- RS-485
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
I
PP
= 40 A (8/20µs)
PEAK PULSE POWER : 300 W (8/20µs)
SEPARATED INPUT-OUTPUT
UP TO 9 BIDIRECTIONAL TRANSIL FUNCTIONS
LOW CLAMPING FACTOR (V
CL
/ V
BR
) AT HIGH
CURRENT LEVEL
LOW LEAKAGE CURRENT
ESD PROTECTION UP TO 15kV
DESCRIPTION
Transil diode arrays provide high overvoltage
protectionby clamping action. Their instantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devices such as MOS Technology and low voltage
supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltage like ESD by elimination
of the spikes induced by parasitic inductances
created by external wiring.
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
IEC 1000-4-2 : level 4
IEC 1000-4-4 : level 4
IEC 1000-4-5 : level 2
MIL STD 883C - Method 3015-6 : class 3
(human body model)
SO20
FUNCTIONAL DIAGRAM
January 1998 Ed: 2
1/6
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