Silicon Bipolar MMIC 1.5 GHz
Variable Gain Amplifier
Technical Data
IVA-05208
Features
• Differential Input and
Output Capability
• DC to 1.5 GHz Bandwidth;
2.0 Gb/s Data Rates
• High Gain:
30 dB Typical
• Wide Gain Control Range:
30 dB Typical
• 5 V Bias
• 5 V V
gc
Control Voltage,
I
gc
< 3mA
• Fast Gain Control Response:
< 10 ns Typical
• Low Cost Plastic Surface
Mount Package
Description
The IVA-05208 is a variable gain
amplifier housed in a miniature
low cost plastic surface mount
package. This device can be used
in any combination of single-
ended or differential inputs or
outputs (see Functional Block
Diagram). The lowest frequency
of operation is limited only by the
values of user selected blocking
and bypass capacitors.
Typical applications include
variable gain amplification for
fiber optic systems (e.g., SONET)
with data rates up to 2.0 Gb/s,
mobile radio and satellite
receivers, millimeter wave
receiver IF amplifiers and
communication receivers.
SO-8 Package
PIN 1
The IVA series of variable gain
amplifiers is fabricated using HP’s
10 GHz f
T
, 25 GHz f
MAX
ISOSAT™-I silicon bipolar
process. This process uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide inter-metal
dielectric and scratch protection
to achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration and Functional Block Diagram
Differential Input / Differential Output
C
block
Input
1
2
V
ee
= 0 V
3
4
C
block
8
7
Output –
6
5
C
block
Output +
Input
C
block
V
CC
= 5 V
C
bypass
C
bypass
V
gc
Single Ended Input / Single Ended Output
C
block
Input
1
2
V
ee
= 0 V
3
4
8
7
6
5
C
block
Output +
C
bypass
C
block
V
CC
= 5 V
C
bypass
C
bypass
V
gc
50
Ω*
C
bypass
= 1000 pF typical
Good grounding of Pins 2, 3 is critical for proper
operation and good VSWR performance of this part.
* Optional: For Single-Ended Output operation, Pin 7
may be left unterminated (no C
block
or 50
Ω)
6-177
5965-9682E
IVA-05208 Absolute Maximum Ratings
Symbol
V
CC
-V
ee
Parameter
Device Voltage
Power Dissipation
[2,3]
Input Power
V
gc
-V
ee
T
J
T
STG
Junction Temperature
Storage Temperature
Units
V
mW
dBm
V
°C
°C
Absolute
Maximum
[1]
8
600
+14
7
150
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 150°C/W
Notes:
1. Permanent damage may occur is any of
these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.67 mW/°C for T
C
> 60°C.
IVA-05208 Electrical Specifications
[1]
,
T
A
= 25°C
Symbol
Gp
∆Gp
f
3dB
GCR
ISO
Parameters and Test Conditions:
[2]
V
CC
= 5 V, V
ee
= 0 V, V
gc
= 0 V, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
[3]
Gain Control Range
[4]
Reverse Isolation (|S
21
|
2
)
Input VSWR
VSWR
Output VSWR
NF
P
1dB
V
OUT
IP
3
t
D
I
CC
50
Ω
Noise Figure
Output Power at 1 dB Gain
Compression
Peak-to-Peak Single-Ended
Output Voltage
Output Third Order Intercept Point
Group Delay
Supply Current
f = 0.5 GHz
V
gc
= 0 to 5 V
f = 0.5 GHz
V
gc
= 0 to 5 V
f = 0.05 to 1.5 GHz
V
gc
= 0 to 5 V
f = 0.05 to 1.5 GHz
V
gc
= 0 to 5 V
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
dB
dBm
mVpp
dBm
psec
mA
25
f = 0.5 GHz
f = 0.05 to 1.0 GHz
Units
dB
dB
GHz
dB
dB
1.2
25
Min.
25
Typ.
30
±
0.8
1.8
30
45
2.0:1
2.5:1
9
-3
450
7
400
35
50
Max.
Notes:
1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following
page.
2. As measured using Input Pin 1 and Output Pin 6, with Output Pin 7 terminated into 50 ohms and Input Pin 4 at AC ground.
3. Referenced from 50 MHz Gain.
4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2V
may result in gain increase rather than gain decrease.
6-178
Embedded System
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