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FS100UM-03

Description
100A, 30V, 0.0054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

FS100UM-03 Overview

100A, 30V, 0.0054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

FS100UM-03 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0054 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MITSUBISHI Nch POWER MOSFET
FS100UM-03
HIGH-SPEED SWITCHING USE
FS100UM-03
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
4.5
1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
7.0
f
3.6
0.8
D
0.5
2.6
2.54
2.54
q w e
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
¡10V
DRIVE
¡V
DSS ..................................................................................
30V
¡r
DS (ON) (MAX) .............................................................
5.4mΩ
¡I
D .......................................................................................
100A
¡Integrated
Fast Recovery Diode (TYP.)
...........
100ns
q
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
30
±20
100
400
100
100
400
125
–55 ~ +150
–55 ~ +150
2.0
4.5MAX.
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 30µH
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