SGF29 datasheet, PDF - EEWORLD Datasheet

Ordering number : ENN7054A

SGF29

N-Channel GaAs MESFET

SGF29

For C to Ku-band Local Oscillator and Amplifier

Features

•

Package Dimensions

unit : mm

2134A

[SGF29]

0.5

1.9

0.95 0.95

0.4

4

3

0 to 0.1

1.5

2.5

•

Lowest phase noise.

The chip surface is covered with the highly reliable

protection film.

Super miniaturized plastic-mold package (CP4).

Automatic surface mounting is available.

0.16

1

2

0.5

0.6

0.95 0.85

2.9

1 : Gate

2 : Source

3 : Drain

4 : Source

SANYO : CP4

0.8

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VDS

VGS

ID

PD

Tj

Tstg

Conditions

Ratings

6

--5

100

200

150

--55 to +150

Unit

V

mA

mW

°C

Electrical Characteristics

at Ta=25°C

Parameter

Gate-to-Source Leakage Current

Saturated Drain Current

Gate-to-Source Cutoff Voltage

Forward Transfer Admittance

Symbol

IGSO

IDSS

VGS(off)



yfs



Conditions

VGS=--5V

VDS=3V, VGS=0

VDS=3V, ID=100µA

VDS=3V, ID=10mA

Ratings

min

30

--0.5

typ

50

--1.4

44

max

--10

70

--2.5

Unit

µA

mA

V

mS

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11802 GI IM / 91001 GI IM No.7054-1/5

1.1

SGF29

S-Parameter

SGF29

FREQUENCY

MHz

3000.0000

4000.0000

5000.0000

6000.0000

7000.0000

8000.0000

9000.0000

10000.0000

11000.0000

12000.0000

13000.0000

14000.0000

15000.0000

16000.0000

MAG

.605

.546

.535

.551

.585

.630

.677

.723

.765

.803

.837

.865

.887

.908

S11

ANG

-139.1

--167.5

167.9

145.9

126.4

109.1

93.6

79.4

66.4

54.2

42.5

30.9

19.4

8.4

MAG

3.198

2.686

2.338

2.060

1.834

1.649

1.491

1.350

1.222

1.106

.999

.899

.800

.675

S21

ANG

72.5

53.3

35.2

17.6

.4

--16..4

--32.7

--48.5

--63.9

--78.8

--93.4

-

-107.9

-

-122.3

-

-136.6

MAG

.103

.114

.127

.146

.169

.192

.212

.230

.247

263

.276

.285

.288

S12

ANG

31.6

28.7

24.2

18.5

10.6

1.1

--9.2

--19.7

--30.3

--41.4

--53.0

--65.0

--76.8

--87.6

VDS=3V IDS=30mA

S22

MAG

.431

.352

.296

.245

.201

.172

.171

.204

.260

.328

.401

.474

.545

.633

ANG

--43.5

--57.1

--72.1

--90.5

--114.8

--147.1

174.9

140.1

113.0

91.7

73.9

58.2

43.8

30.1

SGF29

FREQUENCY

MHz

3000.0000

4000.0000

5000.0000

6000.0000

7000.0000

8000.0000

9000.0000

10000.0000

11000.0000

12000.0000

13000.0000

14000.0000

15000.0000

16000.0000

GUmax

dB

12.97

10.70

9.24

8.12

7.27

6.67

6.26

6.00

5.86

5.87

6.00

6.18

6.31

6.38

12.48

10.57

9.47

8.93

GAmax

dB

S21^2

dB

10.10

8.58

7.38

6.28

5.27

4.34

3.47

2.61

1.74

.87

--.01

--.92

--1.94

--3.41

S12^2

dB

--19.73

--18.85

--17.90

--16.70

--15.44

--14.35

--13.47

--12.76

--12.14

--11.60

--11.17

--10.91

--10.81

.87

1.04

1.12

1.11

1.05

.98

.91

.85

.78

.71

.63

.56

.50

.44

K

Delay

nsec

.055

.052

.050

.049

.048

.046

.045

.044

.042

.041

.040

Mason’s U

dB

21.072

19.171

17.886

17.431

18.036

20.510

VDS=3V IDS=30mA

G1

G2

dB

1.98

1.54

1.46

1.57

1.82

2.19

2.66

3.21

3.82

4.50

5.24

6.00

6.72

7.56

dB

.89

.58

.40

.27

.18

.13

.18

.30

.49

.76

1.10

1.53

2.22

No.7054-2/5

SGF29

S-Parameter

S11

50

25

120˚

100

150

200

250

15.0

50

100

150

250

VDS=3V IDS=30mA, START 3 GHz STOP 16 GHz

S21

90˚

60˚

150˚

3.0

12.0

9.0

30˚

10

6.0

0

10

25

--180˚

5

--10

3.0

9.0

15.0

12.0

--250

--200

--150

--100

R max=1

--50

IT03169

--150˚

--30˚

--25

--120˚

--90˚

S22

--60˚ R max=5

IT03170

S12

90˚

120˚

60˚

50

25

100

150

30˚

10

150˚

15.0

12

.0

200

250

3.0

6.0

9.0

--180˚

0.5

0

10

25

9.0

50

100

150

250

0

--30˚

--10

--150˚

3.0

12.

15.0

6.0

--250

--200

--150

--100

R max=1

--25

--120˚

--90˚

--60˚ R max=0.5

IT03171

--50

IT03172

No.7054-3/5

SGF29

Oscillation Characteristics Measured by the Application JIG for SGF29

Equivalent Circuit of the Application JIG

(Recommended bias condition is VD=5V, ID=35mA)

VD

1000pF

10Ω

Dielectric Resonator

G

Z0,

θ

B

51Ω

D

S

GaAsMESFET

OUTPUT

10Ω

REF 20.0 dBm

PEAK

LOG

10

dB /

ATTEN 30 dB

MKR-TRK 10.678 GHz

10.5 dBm

[hp] 3048A Carrier : 10.678GHz

0

--10

--20

--30

--40

VD=5V

ID=33.5mA

VD=5V

ID=33.5mA

at@ 1kHz --70.0 dBc / Hz

MARKER

10.678 GHz

10.5 dBm

--50

--60

--70

--80

--90

WA SB

SC FS

CORR

--100

--110

--120

--130

--140

--150

100

RES BW 10 kHz

VBW 10 kHz

SPAN 1.000 MHz

SWP 30 ms

IT03173

2

3

5 7 1k

2

3

5 710k

2

3

5 7100k

IT03174

[f] [dBc / Hz] VS f [Hz]

No.7054-4/5

SGF29

Amplification Characteristics Measured by the DUT

Pout VS Pin

f=11GHz

VDS=3V

ID=30mA

GLP=4.5dB

P1dB=16.0dBm

=

B)

4.5

18

15

(d

LP

G

3.5

Pout(dBm)

10

5

0

--5

0

5

10

15

IT03608

Pin(dBm)

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject

to change without notice.

PS No.7054-5/5

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE, HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	KU BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

SGF29

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SGF29 Parametric

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